Noninvasive nature of corona charging on thermal Si/SiO2 structures

Dautrich, M. S.; Lenahan, P. M.; Kang, A. Y.; Conley Jr., J. F.
September 2004
Applied Physics Letters;9/6/2004, Vol. 85 Issue 10, p1844
Academic Journal
The corona charging technique is widely utilized in commercial Si/SiO2 semiconductor device reliability characterization tools and has been used in numerous electron spin resonance (ESR) experiments, by several groups to study defect centers in Si/SiO2 system. A recent ESR study argued that the corona charging approaches are inherently unreliable and invasive. In this work we show that this is not the case. We find that low-field corona biasing is essentially noninvasive and thus can be utilized in both reliability characterization and fundamental studies of defect structures.


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