Are CMOS & Image Analysis the Next Trends?
- Capacitive Micro Pressure Sensor Integrated with a Ring Oscillator Circuit on Chip. Ching-Liang Dai; Po-Wei Lu; Chienliu Chang; Cheng-Yang Liu // Sensors (14248220);2009, Vol. 9 Issue 12, p10158
The study investigates a capacitive micro pressure sensor integrated with a ring oscillator circuit on a chip. The integrated capacitive pressure sensor is fabricated using the commercial CMOS (complementary metal oxide semiconductor) process and a post-process. The ring oscillator is employed...
- THE NEXT WIRELESS WAVE IS A MILLIMETER WAVE. Laskar, J.; Pinel, S.; Dawn, D.; Sarkar, S.; Perumana, B.; Sen, P. // Microwave Journal;Aug2007, Vol. 50 Issue 8, p22
The article focuses on the growing enthusiasm in complementary metal oxide semiconductor (CMOS)-based circuits operating at millimeter-wave frequencies. It is stated that the millimeter-wave spectrum supports a new class of systems and applications ranging from ultra high-speed data...
- Digitally Programmable Analogue Circuits for Sensor Conditioning Systems. Zatorre, Guillermo; Medrano, Nicolás; Sanz, María Teresa; Aldea, Concepción; Calvo, Belén; Celma, Santiago // Sensors (14248220);2009, Vol. 9 Issue 5, p3652
This work presents two current-mode integrated circuits designed for sensor signal preprocessing in embedded systems. The proposed circuits have been designed to provide good signal transfer and fulfill their function, while minimizing the load effects due to building complex conditioning...
- Silicon-on-insulator technology boosts performance in mass-produced CMOS ICs. Fletcher, Peter // Electronic Design;09/14/98, Vol. 46 Issue 21, p26
Focuses on the use of silicon-on-insulator (SOI) technology in mass-produced complementary metal oxide semiconductors (CMOS) integrated circuits. Application of the separation process by oxygen implantation; SOI options; Advantages of SOI-based devices.
- Firm claims CMOS power consumption can be halved! // Electronics Weekly;6/15/2011, Issue 2472, p8
The article reports that the consumption of power by complementary metal oxide semiconductors (CMOS) integrated circuits can be decreased by reducing the variation in threshold voltage in California.
- IDDQ testing finds further faults. Novellino, John // Electronic Design;9/5/95, Vol. 43 Issue 18, p77
Reports on how electronics circuit designers are taking advantage of low static current typical of complementary metal oxide semiconductors (CMOS) devices to uncover previously undetectable process defects in integrated circuits. Improved reliability when using the IDDQ test; Design...
- Digitizers Deliver 1-GHz Bandwidth, 4-Gsample/s Rates On CompactPCI Cards. Novellino, John // Electronic Design;5/13/2002, Vol. 50 Issue 10, p30
Discusses the features and capabilities of complementary metal oxide semiconductor-based V-Class DC series of digitizer cards. Bandwidth offered by the digitizer; Sampling rates; Memory depths; Power consumption.
- Salicides and alternative technologies for future ICs: Part 1. Kittl, Jorge A.; Shiau, Wei-Tsun; Miles, Donald; Violette, Katherine E.; Hu, Jerry C.; Hong, Qi-Zhong // Solid State Technology;Jun99, Vol. 42 Issue 6, p81
Part I. Discusses the applications of salicides and alternative technologies for future complementary metal oxide semiconductors (CMOS). Requirements need to be considered in the development or design of salicide processes; Key obstacle to scaling titanium salicide to deep-submicron features;...
- Two bipolar-CMOS-DMOS IC processes bring forth a new generation of `smart' power devices. Vollmer, Alfred // Electronic Design;8/05/96, Vol. 44 Issue 16, p35
Reports on the development of complementary metal oxide semiconductors (CMOS)-DMOS integrated circuit processes in semiconductors. Developer of the power technology; Features of the technology; Implementation of functions in a single chip; Super smart approach; Highly-integrated solutions;...