Above room temperature operation of short wavelength (λ=3.8 μm) strain-compensated In0.73Ga0.27As–AlAs quantum-cascade lasers

Semtsiv, M. P.; Ziegler, M.; Dressler, S.; Masselink, W. T.; Georgiev, N.; Dekorsy, T.; Helm, M.
August 2004
Applied Physics Letters;8/30/2004, Vol. 85 Issue 9, p1478
Academic Journal
We demonstrate the design and implementation of a broad-gain and low-threshold (Jth=860 A/cm2 at 8 K) quantum-cascade laser emitting between 3.7 and 4.2 μm. The active region design is based on strain-compensated In0.73Ga0.27As–AlAs on InP. Laser operation in pulsed mode is achieved up to a temperature of 330 K with maximum single-facet output peak powers of 6 W at 8 K and 240 mW at 296 K. The temperature coefficient T0 is 119 K.


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