TITLE

Observation of fluorine-vacancy complexes in silicon

AUTHOR(S)
Simpson, P. J.; Jenei, Z.; Asoka-Kumar, P.; Robison, R. R.; Law, M. E.
PUB. DATE
August 2004
SOURCE
Applied Physics Letters;8/30/2004, Vol. 85 Issue 9, p1538
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We show direct evidence, obtained by positron annihilation spectroscopy, for the complexing of fluorine with vacancies in silicon. Both float zone and Czochralski silicon wafers were implanted with 30 keV fluorine ions to a fluence of 2×1014 ions/cm2, and studied in the as-implanted condition, and after annealing to 650 °C for 10 and for 30 min. The “2-detector” background reduction technique for positron annihilation was applied. The spectra reveal a significant concentration of fluorine-vacancy complexes after annealing, for both Czochralski and float zone material, supporting the results of computer simulations of the implantation and annealing process.
ACCESSION #
14258801

 

Related Articles

  • Positron annihilation studies of fluorine-vacancy complexes in Si and SiGe. Edwardson, C. J.; Coleman, P. G.; El Mubarek, H. A. W.; Gandy, A. S. // Journal of Applied Physics;Apr2012, Vol. 111 Issue 7, p073510 

    The formation of fluorine-vacancy (FV) complexes in strained Si-SiGe-Si multilayer structures and relaxed SiGe layers of varying Ge content has been investigated using variable-energy positron annihilation spectroscopy, including Doppler-broadened spectra ratio curves. It has been found that in...

  • Nature of Defects Induced by Au Implantation in Hexagonal Silicon Carbide Single Crystals. Gentils, Aurélie; Barthe, Marie-France; Egger, Werner; Sperr, Peter // AIP Conference Proceedings;3/15/2009, Vol. 1099 Issue 1, p891 

    Pulsed-slow-positron-beam-based positron lifetime spectroscopy was used to investigate the nature of vacancy defects induced by 20 MeV Au implantation in single crystals 6H-SiC. Preliminary analysis of the data shows that at lower fluence, below 1014 cm-2, a positron lifetime of 220 ps has been...

  • Characterization of defects in Si and SiO2-Si using positrons. Asoka-Kumar, P.; Lynn, K. G.; Welch, D. O. // Journal of Applied Physics;11/1/1994, Vol. 76 Issue 9, p4935 

    Demonstrates how positron annihilation spectroscopy (PAS) can be used as a nondestructive probe to examine defects in silicon (Si)-based structures. Analysis of the activation energy for hydrogen detrapping; Description of the use of PAS in compound semiconductor systems; Characterization of...

  • Optical attenuation in defect-engineered silicon rib waveguides. Foster, P. J.; Doylend, J. K.; Mascher, P.; Knights, A. P.; Coleman, P. G. // Journal of Applied Physics;4/1/2006, Vol. 99 Issue 7, p073101 

    The excess optical attenuation at wavelengths around 1550 nm induced by subamorphous dose ion implantation of silicon-on-insulator rib waveguides has been quantified. Optical attenuation is related to the introduction of lattice defects such as the silicon divacancy. After 2.8 MeV Si+...

  • Structural and electrical defects in amorphous silicon probed by positrons and electrons. Roorda, S.; Hakvoort, R. A.; van Veen, A.; Stolk, P. A.; Saris, F. W. // Journal of Applied Physics;12/1/1992, Vol. 72 Issue 11, p5145 

    Investigates the structure of pure amorphous silicon (Si) prepared by ion implantation. Application of variable-energy positron annihilation spectroscopy; Effect of the removal of structural defects and the density of band gap states; Detection of ion irradiation damage in annealed amorphous Si.

  • Insights into positron annihilation lifetime spectroscopy by molecular dynamics simulations. R&acaron;cko, D.; Chelli, R.; Cardini, G.; Bartoš, J.; Califano, S. // European Physical Journal D -- Atoms, Molecules, Clusters & Opti;Mar2005, Vol. 32 Issue 3, p289 

    The relationship between free-volume properties measured from positron annihilation lifetime spectroscopy (PALS) and calculated from molecular dynamics simulations has been investigated for glassy and liquid glycerol in the temperature range 150-400 K. A virtual probing procedure has been...

  • Fluence, flux, and implantation temperature dependence of ion-implantation-induced defect production in 4H–SiC. Slotte, J.; Saarinen, K.; Janson, M. S.; Hallén, A.; Kuznetsov, A. Yu.; Svensson, B. G.; Wong-Leung, J.; Jagadish, C. // Journal of Applied Physics;2/1/2005, Vol. 97 Issue 3, p033513 

    Vacancy-type defect production in Al- and Si-implanted 4H–SiC has been studied as a function of ion fluence, ion flux, and implantation temperature in the projected ion range region by positron annihilation spectroscopy and Rutherford backscattering techniques. Ion channeling measurements...

  • Positron annihilation studies of defects in 3CSiC hot-implanted with nitrogen and aluminum ions. Itoh, Hisayoshi; Uedono, Akira; Ohshima, Takeshi; Aoki, Yasushi; Yoshikawa, Masahito; Nashiyama, Isamu; Tanigawa, Shoichiro; Okumura, Hajime; Yoshida, Sadafumi // Applied Physics A: Materials Science & Processing;1997, Vol. 65 Issue 3, p315 

    Monoenergetic positron beams were used to study defects introduced in cubic silicon carbide (3CSiC) by implantation of 200 keVN[sub 2] [sup +] and Al[sup +] at temperatures from room temperature (RT) to 1200 �C at doses of 10[sup 13] and 10[sup 15] /cm[sup 2] . It is found from Doppler...

  • Direct Experimental Observation of the Positronium Atom in Porous Silicon by Positron Annihilation Spectroscopy. Gavrilov, S. A.; Grafutin, V. I.; Ilyukhina, O. V.; Myasishcheva, G. G.; Prokop'ev, E. P.; Timoshenkov, S. P.; Funtikov, Yu. V. // JETP Letters;6/10/2005, Vol. 81 Issue 11, p548 

    An analysis of the angular distribution of annihilation photons allows us to report the direct experimental observation of the positronium atom in porous silicon. � 2005 Pleiades Publishing, Inc.

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics