TITLE

Spin injection across (110) interfaces: Fe/GaAs(110) spin-light-emitting diodes

AUTHOR(S)
Li, C. H.; Kioseoglou, G.; van 't Erve, O. M. J.; Hanbicki, A. T.; Jonker, B. T.; Mallory, R.; Yasar, M.; Petrou, A.
PUB. DATE
August 2004
SOURCE
Applied Physics Letters;8/30/2004, Vol. 85 Issue 9, p1544
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report electrical spin injection from an Fe contact into a (110)-oriented light-emitting diode (LED) structure, and compare results with data obtained from (001)-oriented structures to address the dependence of spin injection on interface and orientation. Fe/AlGaAs/GaAs LEDs were grown by molecular-beam epitaxy, and processed to form surface emitting structures. Electroluminescence results obtained using a reverse-biased Fe Schottky tunnel barrier injector show that a 13% electron spin polarization is achieved in the GaAs(110) quantum well due to injection across the Fe/AlGaAs(110) interface. Analysis of the transport data indicates that tunneling is a significant transport mechanism at low temperatures. The temperature dependence of the spin polarization is similar to that of (001)-oriented spin LEDs, and is dominated by the GaAs electron spin lifetime.
ACCESSION #
14258799

 

Related Articles

  • Spin-injection device prospects for half-metallic Fe3O4:Al0.1Ga0.9As interfaces. Mansell, R.; Laloë, J.-B.; Holmes, S. N.; Wong, P. K. J.; Xu, Y. B.; Farrer, I.; Jones, G. A. C.; Ritchie, D. A.; Barnes, C. H. W. // Journal of Applied Physics;Aug2010, Vol. 108 Issue 3, p034507 

    Electrical spin-injection across the Fe3O4:Al0.1Ga0.9As interface has been measured. We quantify this effect in an In0.2Ga0.8As:GaAs spin-light emitting diode optical device. The optical polarization signal is maintained from 4.2 up to 200 K without influence of the metal–insulator Verwey...

  • Emission color control from blue to red with nanocolumn diameter of InGaN/GaN nanocolumn arrays grown on same substrate. Sekiguchi, Hiroto; Kishino, Katsumi; Kikuchi, Akihiko // Applied Physics Letters;6/7/2010, Vol. 96 Issue 23, p231104 

    A novel technology for controlling the In composition of InGaN quantum wells on the same wafer was developed, which paved the way for the monolithic integration of three-primary-color nano-light-emitting diodes. In the experiment, InGaN/GaN multiple quantum well nanocolumn arrays with nanocolumn...

  • Fundamentals of Vapor Phase Epitaxial Growth Processes. Stringfellow, G. B. // AIP Conference Proceedings;2007, Vol. 916 Issue 1, p48 

    The first success with the growth of semiconductor materials by vapor phase epitaxy (VPE) dates back to the 1950’s. Today, it is the largest volume technique for the production of both Si and III/V electronic and photonic devices. Of course, commercial processes for the growth of Si...

  • Spontaneous-polarization-induced heterojunction asymmetry in III-nitride semiconductors. Cheng-Tai Kuo; Kai-Kuen Chang; Hung-Wei Shiu; Shih-Chieh Lin; Chia-Hao Chen; Shangjr Gwo // Applied Physics Letters;7/11/2011, Vol. 99 Issue 2, p022113 

    We report on precise control of film crystal polarity in fully relaxed, thin InN/AlN heterojunctions grown on sapphire by plasma-assisted molecular beam epitaxy. Using these samples, we have measured asymmetric valence band offset values (0.8 ± 0.1 eV for the In/Al- and 1.8 ± 0.1 eV for...

  • Growth of single crystal bcc α-Fe on ZnSe via molecular beam epitaxy. Prinz, G. A.; Jonker, B. T.; Krebs, J. J.; Ferrari, J. M.; Kovanic, F. // Applied Physics Letters;6/23/1986, Vol. 48 Issue 25, p1756 

    Molecular beam epitaxy methods have been used to grow high quality single crystal films of bcc α-Fe on fcc (zinc blende) ZnSe (001) epilayers on GaAs (001). These films were characterized by reflection high-energy electron diffraction, Auger electron spectroscopy, ferromagnetic resonance...

  • Tuning the polarization-induced free hole density in nanowires graded from GaN to AlN. Sarwar, A. T. M. Golam; Carnevale, Santino D.; Kent, Thomas F.; Fan Yang; McComb, David W.; Myers, Roberto C. // Applied Physics Letters;1/19/2015, Vol. 106 Issue 3, p1 

    We report a systematic study of p-type polarization-induced doping in graded AlGaN nanowire light emitting diodes grown on silicon wafers by plasma-assisted molecular beam epitaxy. The composition gradient in the p-type base is varied in a set of samples from 0.7%Al/nm to 4.95%Al/ nm...

  • Growth condition dependence of spin-polarized electroluminescence in Fe/MgO/light-emitting diodes. Manago, Takashi; Sinsarp, Asawin; Akinaga, Hiro // Journal of Applied Physics;Oct2007, Vol. 102 Issue 8, p083914 

    We compared the electroluminescence (EL) polarization of two Fe/MgO/light-emitting-diode (LED) structures grown at different substrate temperatures for MgO growth: room temperature and 400 °C. Two spin-LED wafers were prepared on molecular beam epitaxy grown LEDs by e-beam evaporation: one...

  • High-Quality Growth of GaInNAs for Application to Near-Infrared Laser Diodes. Kondow, Masahiko; Ishikawa, Fumitaro // Advances in Optical Technologies;2012, p1 

    GaInNAs was proposed and created in 1995. It can be grown pseudomorphically on a GaAs substrate and is a light-emitting material with a bandgap energy that corresponds to near infrared. By combining GaInNAs with GaAs, an ideal band lineup for laser-diode application is achieved. This paper...

  • Room temperature midinfrared electroluminescence from InSb/InAs quantum dot light emitting diodes. Carrington, P. J.; Solov'ev, V. A.; Zhuang, Q.; Krier, A.; Ivanov, S. V. // Applied Physics Letters;9/1/2008, Vol. 93 Issue 9, p091101 

    Self-assembled InSb submonolayer quantum dots (QDs) in an InAs matrix have been grown by molecular beam epitaxy using Sb2 and As2 fluxes. The structures exhibit bright midinfrared photoluminescence up to room temperature. Intense room temperature electroluminescence with a peak at wavelength...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics