TITLE

Effect of lattice-misfit strain on the process-induced imprint behavior in epitaxial Pb(Zr0.52Ti0.48)O3 thin films

AUTHOR(S)
Wenbin Wu; Wang, Y.; Pang, G. K. H.; Wong, K. H.; Choy, C. L.
PUB. DATE
August 2004
SOURCE
Applied Physics Letters;8/30/2004, Vol. 85 Issue 9, p1583
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The effect of lattice-misfit strain on the process-induced imprint behavior in Pb(Zr0.52Ti0.48)O3 (PZT) capacitors with Pt (top), and SrRuO3, La0.7Sr0.3MnO3 or LaNiO3 (bottom) electrodes has been studied. With the different oxide electrodes and by changing the deposition oxygen pressure, various lattice-misfit strains in the epitaxial PZT films have been produced. It was found that after in situ annealing at reduced oxygen pressures, the capacitors showed an increased voltage offset in the polarization-electric field hysteresis loops with increasing the misfit strain, irrelevant to the oxide electrodes employed, while lattice disorder at the bottom interface can effectively eliminate the voltage shift. Our results suggest that the imprint behavior is caused by oxygen loss via dislocations generated by the misfit strain relaxation at the growth temperature.
ACCESSION #
14258786

 

Related Articles

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics