Electron trapping at the Si (111) atomic step edge

Ishii, Masashi; Hamilton, Bruce
August 2004
Applied Physics Letters;8/30/2004, Vol. 85 Issue 9, p1610
Academic Journal
We have investigated the charge distribution at the interface between the Si (111) wafer and its native oxide by Kelvin force microscopy (KFM) with excitation from a He–Cd laser source. Simultaneous imaging using KFM and atomic force microscopy revealed preferential electron trapping at the Si atomic step edge. No electron hopping (>3.5 nm radius) to neighboring trapping centers was observed. We also found that the ultraviolet laser irradiation enhanced the electron trapping. The trapping probability under visible laser irradiation and that without irradiation were almost the same, viz. ∼40% of that under ultraviolet irradiation. These findings are explained in terms of incomplete bond termination.


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