Ambipolar light-emitting organic field-effect transistor

Rost, Constance; Karg, Siegfried; Riess, Walter; Loi, Maria Antonietta; Murgia, Mauro; Muccini, Michele
August 2004
Applied Physics Letters;8/30/2004, Vol. 85 Issue 9, p1613
Academic Journal
We demonstrate a light-emitting organic field-effect transistor (OFET) with pronounced ambipolar current characteristics. The ambipolar transport layer is a coevaporated thin film of α-quinquethiophene (α-5T) as hole-transport material and N,N′-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (P13) as electron-transport material. The light intensity is controlled by both the drain–source voltage VDS and the gate voltage VG. Moreover, the latter can be used to adjust the charge-carrier balance. The device structure serves as a model system for ambipolar light-emitting OFETs and demonstrates the general concept of adjusting electron and hole mobilities by coevaporation of two different organic semiconductors.


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