Cathodoluminescence study of deep ultraviolet quantum wells grown on maskless laterally epitaxial overgrown AlGaN

Katona, T. M.; Craven, M. D.; Speck, J. S.; DenBaars, S. P.
August 2004
Applied Physics Letters;8/23/2004, Vol. 85 Issue 8, p1350
Academic Journal
We have investigated the cathodoluminescence properties of deep UV quantum wells with an emission wavelength of 287 nm grown on maskless lateral epitaxial overgrown Al0.96Ga0.04N. AlN was grown on sapphire via metalorganic chemical vapor deposition. Parallel, periodic trenches were etched in the AlN and Al0.96Ga0.04N was regrown laterally from the unetched mesas. Al0.42Ga0.58N/Al0.36Ga0.64N quantum wells were then grown on the uncoalesced stripes. Cathodoluminescence was performed on both the laterally overgrown “wings” and unetched “seed” material. Emission from quantum wells located above the wing region was observed to be more intense than emission above the seed region. Depth dependent cathodoluminescence showed that deep level recombination at 3.58 eV (346 nm), 2.77 eV (448 nm), and 2.14 eV (579 nm) was present throughout the n-type Al0.45Ga0.55N and the laterally overgrown unintentionally doped Al0.96Ga0.04N.


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