Band-gap modified Al-doped Zn1-xMgxO transparent conducting films deposited by pulsed laser deposition

Matsubara, K.; Tampo, H.; Shibata, H.; Yamada, A.; Fons, P.; Iwata, K.; Niki, S.
August 2004
Applied Physics Letters;8/23/2004, Vol. 85 Issue 8, p1374
Academic Journal
Al-doped Zn1-xMgxO films have been deposited on glass substrates at a substrate temperature of 200 °C by a pulsed laser deposition system. A resistivity of 3×10-4 Ω cm was obtained at x=0.06. Film resistivity was found to increase with further increases in Mg composition. The maximum band gap of films with a resistivity ρ≤1×10-3 Ω cm was found to be 3.97 eV, demonstrating band-gap engineering possibilities in the range of Eg=3.5–3.97 eV with a resistivity ρ≤1×10-3 Ω cm. The average transmittance of the films was higher than 90% in the wavelength region λ=400–800 nm, a range suitable for transparent conducting film applications.


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