Impact ionization coefficients of 4H silicon carbide

Hatakeyama, T.; Watanabe, T.; Shinohe, T.; Kojima, K.; Arai, K.; Sano, N.
August 2004
Applied Physics Letters;8/23/2004, Vol. 85 Issue 8, p1380
Academic Journal
The article informs that among many wide band-gap semiconductor materials, 4H silicon carbide (4H-SiC) has great potential for use as the material for power devices, owing to its crystal maturity and superior electrical properties, such as nearly isotropic mobility and high breakdown electric field. In this article, the electric-field dependence and anisotropy of the impact ionization coefficients of 4H-SiC are obtained. The obtained impact ionization coefficients show large anisotropy; the ionization coefficients in (11&2macr;0) direction are larger than those in the (0001) direction and the asymmetry of the electron and hole-ionization coefficients in the (0001) direction is smaller than that in the (11&2macr;0) direction.


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