InAs/InP quantum dots emitting in the 1.55 μm wavelength region by inserting submonolayer GaP interlayers

Gong, Q.; Nötzel, R.; van Veldhoven, P. J.; Eijkemans, T. J.; Wolter, J. H.
August 2004
Applied Physics Letters;8/23/2004, Vol. 85 Issue 8, p1404
Academic Journal
We report on the growth of InAs quantum dots (QDs) in GaInAsP on InP (100) substrates by chemical-beam epitaxy, with emission wavelength in the 1.55 μm region. Submonolayer coverage of GaP on the GaInAsP buffer before deposition of the InAs QDs results in most efficient suppression of As/P exchange during InAs growth and subsequent growth interruption under arsenic flux. Continuous wavelength tuning from above 1.6 to below 1.5 μm is thus achieved by varying the coverage of the GaP interlayer within the submonolayer range. Temperature dependent photoluminescence reveals distinct zero-dimensional carrier confinement and indicates that the InAs QDs are free of defects and dislocations.


Related Articles

  • Carrier dynamics in p-type InGaAs/GaAs quantum dots. Wen, X. M.; Dao, L. V.; Davis, J. A.; Hannaford, P.; Mokkapati, S.; Tan, H. H.; Jagadish, C. // Journal of Materials Science: Materials in Electronics;Oct2007 Supplement, Vol. 18, p363 

    In this study we investigate the carrier relaxation dynamics in p-type doped InGaAs/GaAs quantum dots using time-integrated and time-resolved photoluminescence. The experiment shows that while a strong phonon bottleneck is observed in the undoped samples, with a 680 ps rise time of the...

  • Micro-photoluminescence of capped and uncapped ordered single InAs quantum dots on GaAs (311)B. Selçuk, E.; Hamhuis, G. J.; Nötzel, R. // AIP Conference Proceedings;1/4/2010, Vol. 1199 Issue 1, p535 

    Micro-photoluminescence (PL) of capped and uncapped ordered single InAs quantum dots (QDs) on patterned GaAs (311)B substrates exhibits distinct emission lines which are broadened for uncapped QDs. This indicates strong interaction with surface states paving the way towards high-sensitivity...

  • Study of electronic dynamics of quantum dots using resonant photoluminescence technique. Fedorov, A. V.; Rukhlenko, I. D. // Optics & Spectroscopy;May2006, Vol. 100 Issue 5, p716 

    The process of resonant photoluminescence of semiconductor quantum dots, which may serve as a basis for efficiently studying the dynamics of their electronic subsystem, is described theoretically. Potentialities of the spectroscopy of this type are analyzed using, as an example, the intraband...

  • Long-wavelength light emission and lasing from InAs/GaAs quantum dots covered by a GaAsSb strain-reducing layer. Liu, H. Y.; Steer, M. J.; Badcock, T. J.; Mowbray, D. J.; Skolnick, M. S.; Navaretti, P.; Groom, K. M.; Hopkinson, M.; Hogg, R. A. // Applied Physics Letters;4/4/2005, Vol. 86 Issue 14, p143108 

    The effects of a thin GaAsSb strain-reducing layer on the optical properties of InAs/GaAs quantum dots (QDs) are investigated. With increasing Sb composition, the room-temperature emission wavelength of the InAs QDs increases to ∼1.43 μm. For Sb compositions above 14%, the system becomes...

  • Room temperature emission from CdSe/ZnSSe/MgS single quantum dots. Arians, R.; Kümmell, T.; Bacher, G.; Gust, A.; Kruse, C.; Hommel, D. // Applied Physics Letters;3/5/2007, Vol. 90 Issue 10, p101114 

    The authors report on room temperature photoluminescence from single CdSe quantum dots. The quantum dots, realized by self-organized epitaxial growth, are embedded in ZnSSe/MgS barriers. The integrated intensity of the emission drops by less than a factor of 3 between 4 K and room temperature....

  • Temperature dependence of the photoluminescence emission from thiol-capped PbS quantum dots. Turyanska, L.; Patanè, A.; Henini, M.; Hennequin, B.; Thomas, N. R. // Applied Physics Letters;3/5/2007, Vol. 90 Issue 10, p101913 

    The authors report the temperature dependence of the near-infrared photoluminescence (PL) emission from thiol-capped PbS quantum dots. The high thermal stability of the PL allows the authors to study the thermal broadening of the dot emission over an extended temperature range (4–300 K)....

  • Characterization of self-assembled InAs quantum dots with InAlAs/InGaAs strain-reduced layers by photoluminescence spectroscopy. Chang, K. P.; Yang, S. L.; Chuu, D. S.; Hsiao, R. S.; Chen, J. F.; Wei, L.; Wang, J. S.; Chi, J. Y. // Journal of Applied Physics;4/15/2005, Vol. 97 Issue 8, p083511 

    The optoelectronic characteristics of self-assembled InAs quantum dots (QDs) with strain-reduced layers (SRLs) were investigated using photoluminescence (PL) spectroscopy. Various SRLs that combine In0.14Al0.86As and In0.14Ga0.86As with the same total thickness were examined to ascertain their...

  • Enhanced light emission from InAs quantum dots in single-defect photonic crystal microcavities at room temperature. Chen, W.-Y.; Chang, W.-H.; Chang, H.-S.; Hsu, T. M.; Chien-Chieh Lee; Chien-Chang Chen; Luan, P. G.; Chang, J.-Y.; Hsieh, T.-P.; Chyi, J.-I. // Applied Physics Letters;8/15/2005, Vol. 87 Issue 7, p071111 

    The optical properties of InAs quantum dots with photonic crystal microcavity emitting near 1.3 μm were investigated at room temperature. The photoluminescence (PL) intensity for quantum dots in cavity was enhanced by two orders of magnitude. The large PL enhancement was attributed to the...

  • Photoluminescence characteristics of coupled CdSe/ZnS quantum dots on self-assembled silica nanospheres. Kang, K. S.; Ju, H. L.; Han, W. H.; Lee, J. H.; Choi, J. G.; Boo, D. W. // Applied Physics Letters;10/3/2005, Vol. 87 Issue 14, p141909 

    The photoluminescence (PL) characteristics of the self-assembled silica nanospheres containing coupled CdSe/ZnS core-shell quantum dots (QDs) on the surface of the sphere were studied. The degree of QD-coupling and the distribution of the coupled QDs were controlled by generating spatially...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics