Influence of pressure and ion bombardment on the growth and properties of nanocrystalline silicon materials

Dalal, Vikram L.; Graves, Joshua; Leib, Jeffrey
August 2004
Applied Physics Letters;8/23/2004, Vol. 85 Issue 8, p1413
Academic Journal
We report on the growth and properties of nanocrystalline silicon:H films deposited using plasma discharge at 45 MHz under varying pressure regimes from 50 to 500 mTorr. X-ray diffraction data revealed that the primary orientation in these films was <111>. The amount of hydrogen dilution needed to crystallize the films was found to be a strong function of deposition pressure, with a significantly higher hydrogen dilution needed to crystallize films at higher pressures. Langmuir probe data showed that these results could be attributed to the increase in density of low-energy hydrogen ions impinging on the substrate at lower pressures.


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