Surfactant effect of gallium during the growth of GaN on [formula] by plasma-assisted molecular beam epitaxy

Gogneau, N.; Sarigiannidou, E.; Monroy, E.; Monnoye, S.; Mank, H.; Daudin, B.
August 2004
Applied Physics Letters;8/23/2004, Vol. 85 Issue 8, p1421
Academic Journal
In this article the growth mode of N-face GaN deposited on AIN(000&1macr;) by plasma-assisted molecular beam epitaxy has been investigated. Experiments were performed on commercial 6H-SiC(0001) substrates polished by NOVASIC Company in a MECA2000 plasma-assisted molecular beam epitaxy chamber, active nitrogen being supplied by a radio-frequency plasma cell. The mass fluxes in monolayers per second were deduced from the stoichiometric growth rate of Ga-polar GaN and Al-polar AIN measured by reflection high-energy electron diffraction at low temperature to prevent underestimation due to metal desorption. It was concluded that a self-regulated 1-ML-thick Ga film can be formed on the growing surface. This Ga monolayer behaves as a surfactant during the growth of N-face GaN/AIN heterostructures, in contrast with the Ga-polar GaN/AIN(0001) system where the surfactant effect is only observed for 2 ML Ga coverage.


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