TITLE

Ultraviolet light-emitting diodes operating in the 340 nm wavelength range and application to time-resolved fluorescence spectroscopy

AUTHOR(S)
Peng, H.; Makarona, E.; He, Y.; Song, Y.-K.; Nurmikko, A. V.; Su, J.; Ren, Z.; Gherasimova, M.; Jeon, S.-R.; Cui, G.; Han, J.
PUB. DATE
August 2004
SOURCE
Applied Physics Letters;8/23/2004, Vol. 85 Issue 8, p1436
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report on the development of UV light-emitting diodes in the 340 nm wavelength range, based on quaternary AlGaInN quantum-well active media. Output powers up to 1 mW from small area devices (<100 μm diameter) directly off a planar chip have been achieved. The devices have been operated as subnanosecond pulsed sources to demonstrate their applicability to compact time-resolved fluorescence spectroscopy.
ACCESSION #
14154437

 

Related Articles

  • An investigation on the light-emission mechanism of metal-insulator-semiconductor light-emitting diodes with different SiGe quantum well structures. Liao, Milton M. H. // Applied Physics Letters;6/15/2009, Vol. 94 Issue 24, p241908 

    The SiGe quantum well (QW) tunneling diodes with different Si cap thickness are designed in this work to investigate the detailed mechanism of light emission for the metal-insulator-semiconductor (MIS) light-emitting diode (LED). At the accumulation (negative) gate bias, the electrons tunnel...

  • Effect of Mg doping in the barrier of InGaN/GaN multiple quantum well on optical power of light-emitting diodes. Sang-Heon Han; Chu-Young Cho; Sang-Jun Lee; Tae-Young Park; Tae-Hun Kim; Seung Hyun Park; Sang Won Kang; Je Won Kim; Yong Chun Kim; Seong-Ju Park // Applied Physics Letters;2/1/2010, Vol. 96 Issue 5, p051113 

    We report on Mg doping in the barrier layers of InGaN/GaN multiple quantum wells (MQWs) and its effect on the properties of light-emitting diodes (LEDs). Mg doping in the barriers of MQWs enhances photoluminescence intensity, thermal stability, and internal quantum efficiency of LEDs. The light...

  • A novel theoretical model for broadband blue InGaN/GaN superluminescent light emitting diodes. Milani, N. Moslehi; Mohadesi, V.; Asgari, A. // Journal of Applied Physics;2015, Vol. 117 Issue 5, p054502-1 

    A broadband superluminescent light emitting diode with In0.2Ga0.8N/GaN multiple quantum wells (MQWs) active region is investigated. The investigation is based on a theoretical model which includes the calculation of electronic states of the structure, rate equations, and the spectral radiation...

  • Confocal microphotoluminescence of InGaN-based light-emitting diodes. Okamoto, Koichi; Kaneta, Akio; Kawakami, Yoichi; Fujita, Shigeo; Jungkwon Choi; Terazima, Masahide; Mukai, Takashi // Journal of Applied Physics;9/15/2005, Vol. 98 Issue 6, p064503 

    Spatially resolved photoluminescence (PL) of InGaN/GaN/AlGaN-based quantum-well-structured light-emitting diodes (LEDs) with a yellow-green light (530 nm) and an amber light (600 nm) was measured by using confocal microscopy. Submicron-scale spatial inhomogeneities of both PL intensities and...

  • Efficient hole transport in asymmetric coupled InGaN multiple quantum wells. Jiang-Yong Zhang; Cai, Li-E.; Bao-Ping Zhang; Xiao-Long Hu; Fang Jiang; Jin-Zhong Yu; Qi-Ming Wang // Applied Physics Letters;10/19/2009, Vol. 95 Issue 16, p161110 

    InGaN based light emitting devices (LEDs) with asymmetric coupled quantum wells (AS-QWs) and conventional symmetric coupled quantum wells (CS-QWs) active structures were grown by metal-organic chemical vapor deposition technique. The LEDs with AS-QWs active region show improved light emission...

  • Lateral light emitting n-i-p diodes in InSb/AlxIn1-xSb quantum wells. Smith, S. J.; Nash, G. R.; Bartlett, C. J.; Buckle, L.; Emeny, M. T.; Ashley, T. // Applied Physics Letters;9/11/2006, Vol. 89 Issue 11, p111118 

    Lateral light emitting diodes have been fabricated in InSb/AlxIn1-xSb quantum wells using a simple bevel etching technique. The peak in emission was found to be in the range of 4-5 μm, confirming that the emission was from the quantum well.

  • Growth and characteristics of GaInN/GaInN multiple quantum well light-emitting diodes. Lee, Wonseok; Kim, Min-Ho; Zhu, Di; Noemaun, Ahmed N.; Kim, Jong Kyu; Schubert, E. F. // Journal of Applied Physics;Mar2010, Vol. 107 Issue 6, p063102 

    We demonstrate GaInN multiple quantum well (MQW) light-emitting diodes (LEDs) having ternary GaInN quantum barriers (QBs) instead of conventional binary GaN QBs for a reduced polarization mismatch between QWs and QBs and an additional separate confinement of carriers to the MQW active region. In...

  • Metal-organic chemical vapor deposition growth of InGaN/GaN high power green light emitting diode: Effects of InGaN well protection and electron reservoir layer. Ju, Jin-Woo; Kang, Eun-Sil; Kim, Hwa-Soo; Jang, Lee-Woon; Ahn, Haeng-Keun; Jeon, Ju-Won; Leea, In-Hwan; Baek, Jong Hyeob // Journal of Applied Physics;9/1/2007, Vol. 102 Issue 5, p053519 

    We investigated the effects of the well protection layer (WPL) and electron reservoir layer (ERL) on the emission properties of InGaN/GaN green multiple quantum wells (MQWs). In order to increase their emission wavelength by preventing the volatile InGaN well, a thin GaN WPL was coated...

  • Phosphor-free white light-emitting diode with laterally distributed multiple quantum wells. Il-Kyu Park; Ja-Yeon Kim; Min-Ki Kwon; Chu-Young Cho; Jae-Hong Lim; Seong-Ju Park // Applied Physics Letters;3/3/2008, Vol. 92 Issue 9, p091110 

    A phosphor-free white light-emitting diode (LED) was fabricated with laterally distributed blue and green InGaN/GaN multiple quantum wells (MQWs) grown by a selective area growth method. Photoluminescence and electroluminescence (EL) spectra of the LED showed emission peaks corresponding to the...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics