Power amplifiers

August 2004
Portable Design;Aug2004, Vol. 10 Issue 8, p39
Describes power amplifiers from different companies. RangeCharger SE5103L/5106L/5107L CDMA power amplifier from SiGe Semiconductor Inc.; RMPA2453 RF linear power amplifier from Fairchild Semiconductor Corp.; Quad-band EDGE-capable power amplifier from RF Micro Devices Inc.


Related Articles

  • Power amplifiers.  // Portable Design;Aug2005, Vol. 11 Issue 8, p31 

    The article features several power amplifiers. Fairchild Semiconductor's RMPA2265PowerEdge dual-band WDCMA/UMTS RF power-amplifier module. Agilent Technologies' WS1102 and WS1401 CDMA power-amplifier modules are designed for handsets operating in the 824-849-and 1,850-1,910-MHz bands,...

  • THE CASE FOR TRANSMIT MODULES (TxM).  // Microwave Journal;Jun2005, Vol. 48 Issue 6, p108 

    The article reports that Greensboro, North Carolina-based RF Micro Devices Inc.'s designers have developed the RF3177 and RF3178 transmit modules (TxM). A transmit module is comprised of a combination of power amplifier, controller, harmonic filters and antenna switch, all in one module. A TxM...

  • GaAs DRIVER POWER AMP FITS MULTIBAND BASE- STATION NEEDS. Schweber, Bill // EDN Europe;Sep2004, Vol. 49 Issue 9, p6 

    Features the RF3800 series of six driver power amplifiers from RF Micro Devices, which are gallium arsenide heterojunction-bipolar-transistor devices.

  • PRODUCT NEWS: AMPLIFIERS.  // Wireless Design & Development;Sep2004, Vol. 12 Issue 9, p50 

    Evaluates several amplifiers from various manufacturers. SiGe Semiconductor Inc.; National Semiconductor Corp.; Agilent Technologies lnc.; Fairchild Semiconductor.

  • RF Micro Devices.  // Wireless Design & Development;Nov2000, Vol. 8 Issue 11, p90 

    Focuses on RF Micro Devices Inc., a North Carolina-based manufacturer of radio frequency components for the wireless communications market. Offering of diverse process technologies for radio frequency identification applications; Mixed-signal design and integration; Multi-chip modules; Product...

  • Power Amp Boosts Output In 5-GHz 802.11a Products.  // Electronic Design;9/20/2004, Vol. 52 Issue 21, p30 

    This article introduces the RangeCharger SE2534A three-stage linear power amplifier developed by SiGe Semiconductor Inc. The RangeCharger SE2534A power amplifier incorporates a power detector, analog biasing, and interstage matching circuits. It can produce up to 17.5-dBm output power with an...

  • Wi-Fi Power Amp Maximizes Data Rate And Range.  // Electronic Design;10/27/2003, Vol. 51 Issue 24, p28 

    Features RangeCharger SE2525L power amplifier for 802.11b and 802.11g Wi-Fi transceivers developed by SiGe Semiconductor Inc. Percentage of error vector magnitude delivered by the power amplifier; Features of the device; Match accuracy of the device; Cost of the device.

  • Power amplifier has been shrunk.  // Electronics Weekly;2/23/2005, Issue 2182, p28 

    The article reports that RF Micro Devices Inc. latest power amplifier (PA) module measures 6x6x1. 4mm, which represents greater than 30 per cent reduction in size versus the previous generation of PowerStar PA modules. The quad-band RF3158 (GSM/GPRS/EDGE) is optimized for linear EDGE using...

  • A CUSTOM III-V HETEROJUNCTION BIPOLAR TRANSISTOR MODEL. Nedeljkovic, Sonja R.; McMacken, John R.; Partyka, Paul J.; Gering, Joseph M. // Microwave Journal;Apr2009, Vol. 52 Issue 4, p60 

    The article outlines some of the works done at the RF Micro Devices Inc. (RFMD) in Greensboro, North Carolina, to develop and support scalable heterojunction bipolar transistor (HBT) models suitable for handset power amplifier design. It offers a brief outline of the development of a custom HBT...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics