TITLE

Control of photoluminescence properties of Si nanocrystals by simultaneously doping n- and p-type impurities

AUTHOR(S)
Fujii, Minoru; Yamaguchi, Yasuhiro; Takase, Yuji; Ninomiya, Keiichi; Hayashi, Shinji
PUB. DATE
August 2004
SOURCE
Applied Physics Letters;8/16/2004, Vol. 85 Issue 7, p1158
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The effects of B and P codoping on photoluminescence (PL) properties of Si nanocrystals (nc-Si) are studied systematically. It is shown that the PL intensity of codoped nc-Si is always higher than that of either P- or B-doped nc-Si. The intensity is sometimes even higher than that of pure nc-Si at relatively low P and B concentrations and low annealing temperatures. By doping P and B simultaneously to very high concentrations, the PL peak shifts below the band gap of bulk Si.
ACCESSION #
14085043

 

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