Band offset design with quantum-well gate insulating structures

Schimizu, Tatsuo; Yamaguchi, Takeshi
August 2004
Applied Physics Letters;8/16/2004, Vol. 85 Issue 7, p1167
Academic Journal
The authors propose a concept, a nanoscaled quantum-well gate insulating structure. The effective conduction band offset (ΔEc) can be controlled with an appropriate combination of high-K and high-ΔEc materials. The electronic structures of SrTiO3 and Sr2TiO4 were studied by means of first-principles calculations to investigate the change in the band structures induced by SrO-layer intercalation. The ΔEc of Sr2TiO4 is raised by about +0.8 eV. A quantum-well gate insulating structure with off-resonance condition is also proposed. The ΔEc becomes as high as the barrier height of the barrier material.


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