TITLE

Band offset design with quantum-well gate insulating structures

AUTHOR(S)
Schimizu, Tatsuo; Yamaguchi, Takeshi
PUB. DATE
August 2004
SOURCE
Applied Physics Letters;8/16/2004, Vol. 85 Issue 7, p1167
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The authors propose a concept, a nanoscaled quantum-well gate insulating structure. The effective conduction band offset (ΔEc) can be controlled with an appropriate combination of high-K and high-ΔEc materials. The electronic structures of SrTiO3 and Sr2TiO4 were studied by means of first-principles calculations to investigate the change in the band structures induced by SrO-layer intercalation. The ΔEc of Sr2TiO4 is raised by about +0.8 eV. A quantum-well gate insulating structure with off-resonance condition is also proposed. The ΔEc becomes as high as the barrier height of the barrier material.
ACCESSION #
14085040

 

Related Articles

  • Iron-induced deep-level acceptor center in GaN/AlGaN high electron mobility transistors: Energy level and cross section. Silvestri, Marco; Uren, Michael J.; Kuball, Martin // Applied Physics Letters;2/18/2013, Vol. 102 Issue 7, p073501 

    Dynamic transconductance dispersion measurements coupled with device physics simulations were used to study the deep level acceptor center in iron-doped AlGaN/GaN high electron mobility transistors (HEMT). From the extracted frequency dependent trap-conductance, an energy level 0.7 eV below the...

  • Intrinsic concentration, effective densities of states, and effective mass in silicon. Green, Martin A. // Journal of Applied Physics;3/15/1990, Vol. 67 Issue 6, p2944 

    Examines the inconsistency between commonly used values of the silicon intrinsic carrier concentration, the effective densities of states in the conduction and valence bands and the silicon band gap. Magnitude of the inconsistency; Identification of the source of discrepancy in the commonly...

  • Low frequency noise in long channel amorphous In-Ga-Zn-O thin film transistors. Tze-Ching Fung; Gwanghyeon Baek; Kanicki, Jerzy // Journal of Applied Physics;Oct2010, Vol. 108 Issue 7, p074518 

    We investigated the low-frequency noise properties in the inverted-staggered amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) with the silicon dioxide (SiO2) gate dielectric. The dependence of noise level on gate area indicates that the 1/f noise is the dominate source and the...

  • Energetics of hydrogen in GeO2, Ge, and their interfaces. Ka Xiong; Liang Lin; Robertson, John; Kyeongjae Cho // Applied Physics Letters;7/18/2011, Vol. 99 Issue 3, p032902 

    The energetics of interstitial hydrogen in GeO2, Ge, and their interfaces are calculated using a hybrid density functional. We find that interstitial atomic hydrogen unexpectedly behaves as a donor in GeO2, like H in ZnO but unlike H in SiO2. At Ge:GeO2 interfaces, the donor electron can...

  • Noise and Interface Density of Traps in 4 H-SiC MOSFETs. Rumyantsev, S. L.; Levinshtein, M. E.; Ivanov, P. A.; Shur, M. S.; Palmour, J. W.; Agarwal, A. K.; Hull, B. A.; Ryu, S. H. // AIP Conference Proceedings;4/23/2009, Vol. 1129 Issue 1, p341 

    The low frequency noise was studied in 4 H-SiC Metal Oxide Semiconductor Field Effect Transistors in the frequency range from 1 Hz to 100 kHz. The trap density responsible for the noise extracted using the McWhorter model increases approaching the conduction band edge, where it reaches the...

  • Origin of definite Hall voltage and positive slope in mobility-donor density relation in disordered oxide semiconductors. Kamiya, Toshio; Nomura, Kenji; Hosono, Hideo // Applied Physics Letters;3/22/2010, Vol. 96 Issue 12, p122103 

    Amorphous oxide semiconductors (AOSs) are expected for alternative channel materials in thin-film transistors owing to their large electron mobilities. While, it is known that AOSs exhibit peculiar electron transport properties. Definite Hall voltages are observed even for mobilities <0.2 cm2/V...

  • Electric field modulation of thermopower for transparent amorphous oxide thin film transistors. Koide, Hirotaka; Nagao, Yuki; Koumoto, Kunihito; Takasaki, Yuka; Umemura, Tomonari; Kato, Takeharu; Ikuhara, Yuichi; Ohta, Hiromichi // Applied Physics Letters;11/1/2010, Vol. 97 Issue 18, p182105 

    To clarify the electronic density of states (DOS) around the conduction band bottom for state of the art transparent amorphous oxide semiconductors (TAOSs), InGaZnO4 and In2MgO4, we fabricated TAOS-based transparent thin film transistors (TTFTs) and measured their gate voltage dependence of...

  • Modeling of anisotropic two-dimensional materials monolayer HfS2 and phosphorene metal-oxide semiconductor field effect transistors. Jiwon Chang // Journal of Applied Physics;6/7/2015, Vol. 117 Issue 21, p214502-1 

    Ballistic transport characteristics of metal-oxide semiconductor field effect transistors (MOSFETs) based on anisotropic two-dimensional materials monolayer HfS2 and phosphorene are explored through quantum transport simulations. We focus on the effects of the channel crystal orientation and the...

  • New insights in the passivation of high-k/InP through interface characterization and metal-oxide-semiconductor field effect transistor demonstration: Impact of crystal orientation. Xu, Min; Gu, Jiangjiang J.; Wang, Chen; Zhernokletov, D. M.; Wallace, R. M.; Ye, Peide D. // Journal of Applied Physics;Jan2013, Vol. 113 Issue 1, p013711 

    We have systematically studied the passivation of InP (100) and (111)A substrate using atomic-layer-deposited Al2O3 as gate dielectric. Modified high- and low-frequency method and full conductance method has been applied to evaluate the interface trap density (Dit) distribution at Al2O3/InP...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics