TITLE

Zn0.9Mg0.1O/ZnO p–n junctions grown by pulsed-laser deposition

AUTHOR(S)
Ip, K.; Heo, Y. W.; Norton, D. P.; Pearton, S. J.; LaRoche, J. R.; Ren, F.
PUB. DATE
August 2004
SOURCE
Applied Physics Letters;8/16/2004, Vol. 85 Issue 7, p1169
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The electrical characteristics of Zn0.9Mg0.1O/ZnO p–n junctions grown by pulsed-laser deposition on bulk, single-crystal ZnO substrates are reported. The forward turn-on voltage of the junctions was in the range 3.6–4 V for Pt/Au metallization used for the p-Ohmic contact on Zn0.9Mg0.1O.The reverse breakdown voltage is as high as 9 V, but displays a small negative temperature coefficient of -0.1–0.2 V K-1 over the range 30–200°C. The achievement of acceptable rectification in the junctions required growth of an n-type ZnO buffer on the ZnO substrate prior to growth of the p-type, phosphorus-doped Zn0.9mg0.1O.Without this buffer, the junctions showed very high leakage current.
ACCESSION #
14085039

 

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