Zn0.9Mg0.1O/ZnO p–n junctions grown by pulsed-laser deposition

Ip, K.; Heo, Y. W.; Norton, D. P.; Pearton, S. J.; LaRoche, J. R.; Ren, F.
August 2004
Applied Physics Letters;8/16/2004, Vol. 85 Issue 7, p1169
Academic Journal
The electrical characteristics of Zn0.9Mg0.1O/ZnO p–n junctions grown by pulsed-laser deposition on bulk, single-crystal ZnO substrates are reported. The forward turn-on voltage of the junctions was in the range 3.6–4 V for Pt/Au metallization used for the p-Ohmic contact on Zn0.9Mg0.1O.The reverse breakdown voltage is as high as 9 V, but displays a small negative temperature coefficient of -0.1–0.2 V K-1 over the range 30–200°C. The achievement of acceptable rectification in the junctions required growth of an n-type ZnO buffer on the ZnO substrate prior to growth of the p-type, phosphorus-doped Zn0.9mg0.1O.Without this buffer, the junctions showed very high leakage current.


Related Articles

  • Multifunctional behavior of ZnO supported Bi1-xDyxFeO3 nanorods. Mandal, M.; Chatterjee, Sriparna; Palkar, V. R. // Journal of Applied Physics;Sep2011, Vol. 110 Issue 5, p054313 

    We have shown that it is possible to realize multifunctional Bi1-xDyxFeO3 (BDFO) nanorods by coating BDFO film on ZnO nanorods. These BDFO coated ZnO (BDFO/ZnO) nanorods are obtained by depositing BDFO on vertical ZnO nanorods grown on Si substrate by using pulsed laser deposition technique. The...

  • Femtosecond laser assisted growth of ZnO nanowires. Yanfeng Zhang; Russo, Richard E.; Mao, Samuel S. // Applied Physics Letters;9/26/2005, Vol. 87 Issue 13, p133115 

    Crystalline ZnO nanowires were grown by the pulsed laser deposition (PLD) approach using a femtosecond laser as the ablation source. As determined by electron microscopy, the femtosecond PLD grown ZnO nanowires showed good crystalline characteristics and reasonably uniform diameters, which can...

  • ZnO nano-rods synthesized by nano-particle-assisted pulsed-laser deposition. Okada, T.; Agung, B. H.; Nakata, Y. // Applied Physics A: Materials Science & Processing;2004, Vol. 79 Issue 4-6, p1417 

    We succeeded in synthesizing ZnO nanorods by nanoparticle assisted pulsed-laser deposition (PLD) without using any catalyst where nanoparticles formed by condensation of ablated particles play an important role. The nanorods have an average size of about 120 nm. Stimulated emission was observed...

  • Epitaxial growth of ZnO films on (100) and (001) γ-LiAlO2 substrates by pulsed laser deposition. Zou, Jun; Zhou, Shengming; Xu, Jun; Zhang, Xia; Li, Xiaomin; Xie, Zili; Han, Ping; Zhang, Rong // Journal of Materials Science;Sep2006, Vol. 41 Issue 18, p5937 

    Structural and optical properties were investigated for ZnO films grown on (100) and (001) γ-LiAlO2 (LAO) substrates by pulsed laser deposition method. According XRD results, it is intuitionistic that (100) LAO is suitable for fabricating high quality ZnO film, while (001) LAO is unsuitable....

  • Detection of hydrogen at room temperature with catalyst-coated multiple ZnO nanorods. Wang, H. T.; Kang, B. S.; Ren, F.; Tien, L. C.; Sadik, P. W.; Norton, D. P.; Pearton, S. J.; Lin, J. // Applied Physics A: Materials Science & Processing;Nov2005, Vol. 81 Issue 6, p1117 

    A variety of different metal catalyst coatings (Pt, Pd, Au, Ag, Ti and Ni) deposited on multiple ZnO nanorods have been compared for their effectiveness in enhancing sensitivity for detecting hydrogen at room temperature. Pt-coated nanorods show a relative response of up to 8% in...

  • Pulsed-laser-deposited p-type ZnO films with phosphorus doping. Vaithianathan, Veeramuthu; Byung-Teak Lee; Sang Sub Kim // Journal of Applied Physics;8/15/2005, Vol. 98 Issue 4, p043519 

    We report the preparation of p-type ZnO thin films on Al2O3(0001) substrates with phosphorus doping by pulsed laser deposition using Zn3P2 as the dopant source material. The results of the Hall effect measurements taken at room temperature indicate that the 3-mol % phosphorus-doped ZnO films...

  • Pulsed laser deposition of non-stoichiometric silicon nitride (SiNx) thin films. Lackner, J. M.; Waldhauser, W.; Ebner, R.; Beutl, M.; Jakopic, G.; Leising, G.; Hutter, H.; Rosner, M. // Applied Physics A: Materials Science & Processing;2004, Vol. 79 Issue 4-6, p1525 

    Silicon nitride (SiNx) thin films of various stoichiometries (x) were prepared on Si (100) substrates applying the Nd : YAG (λ=1064 nm) pulsed laser deposition (PLD) process in the “shaded off-axis” technique at room temperature. The specific arrangement of this technique with...

  • Epitaxial, cation-ordered, ferroelectric PbSc0.5Ta0.5O3 thin films prepared by pulsed laser deposition. Chopra, Anuj; Birajdar, Balaji I.; Yunseok Kim; Vrejoiu, Ionela; Alexe, Marin; Hesse, Dietrich // Applied Physics Letters;7/13/2009, Vol. 95 Issue 2, p022907 

    We report on growth and ferroelectric properties of cation-ordered, epitaxial PbSc0.5Ta0.5O3 (100) films. Single phase epitaxial films were grown on vicinal SrTiO3 (100) substrates with a layer of SrRuO3 as bottom electrode by pulsed laser deposition. Their crystal orientation, topography, and...

  • Structural and optical properties of AgIn5S8 films grown by pulsed laser deposition. Bodnar', I. V.; Gremenok, V. F. // Inorganic Materials;Dec2004, Vol. 40 Issue 12, p1244 

    -Thin AgIn5S8 films are grown on glass substrates by pulsed laser deposition using bulk crystals as targets, and their structure, chemical composition, surface morphology, and optical properties (transmission and reflection spectra in the range 0.5-2.5 µm) are investigated. The transmission...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics