Electrical transport in amorphous semiconducting AlMgB14 films

Tian, Y.; Li, G.; Shinar, J.; Wang, N. L.; Cook, B. A.; Anderegg, J. W.; Constant, A. P.; Russell, A. M.; Snyder, J. E.
August 2004
Applied Physics Letters;8/16/2004, Vol. 85 Issue 7, p1181
Academic Journal
The electrical transport properties of semiconducting AlMgB14 films deposited at room temperature and 573 K are reported in this letter. The as-deposited films are amorphous, and they exhibit high n-type electrical conductivity, which is believed to stem from the conduction electrons donated by Al, Mg, and/or Fe impurities in these films. The film deposited at 573 K is less conductive than the room-temperature-deposited film. This is attributed to the nature of donor or trap states in the band gap related to the different deposition temperatures.


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