Measurements of low-frequency noise spectral densities for a small-sized stack of intrinsic Josephson junctions of Bi2Sr2CaCu2Oy single crystal

Saito, A.; Ishida, H.; Hamasaki, K.; Irie, A.; Oya, G.
August 2004
Applied Physics Letters;8/16/2004, Vol. 85 Issue 7, p1196
Academic Journal
We measured the low-frequency-voltage noise properties of a small-sized stack of intrinsic Josephson junctions formed on the surface of a cleaved Bi2Sr2CaCu2Oy (Bi-2212) single crystal, containing a few intrinsic Josephson junctions. A stack with an area of 2×2 μm was fabricated by electron-beam lithography and argon-ion-milling. The current–voltage (I–V) characteristics along the c-axis direction of the stack were measured by a three-terminal method. The stack showed (I–V) and dV/dI-V curves without backbending due to heating effects. Five discrete resistive branches with hysteresis were observed in the low-voltage region of these curves. The measured noise-voltage spectral density SV(f) had a 1/f dependence on frequency. We estimated the magnitude of the 1/f noise parameter η from SV(f) in a Bi-2212 stack and found that above the sum-gap voltage in a small-sized stack η was almost the same as that for low-Tc Nb/Al+AlOx/Nb high-quality tunnel junctions.


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