Electrical and optical properties of Bi2Ti2O7 thin films prepared by metalorganic decomposition method

Yun Hou; Tie Lin; Zhiming Huang; Genshui Wang; Zhigao Hu; Junhao Chu; Xiaohong Xu; Min Wang
August 2004
Applied Physics Letters;8/16/2004, Vol. 85 Issue 7, p1214
Academic Journal
Highly (111) oriented Bi2Ti2O7 thin films have been grown on Pt/Ti/SiO2/Si and Al2O3 substrates by metalorganic decomposition method at 550°C. The structural properties of the films were examined by x-ray diffraction. The Bi2Ti2O7 films exhibit good insulating property and the leakage current density of the film on Pt/Ti/SiO2/Si is only about 1.56×10-8 A/cm2 at 200 kV/cm. The refractive index and extinction coefficient of Bi2Ti2O7 thin films were determined by fitting the infrared spectroscopic ellipsometric data using a classical dielectric function formula. As the wavelength increases, the refractive index decreases, while the extinction coefficient increases. And the band-gap energy Eg was obtained from the optical transmission spectra of Bi2Ti2O7 thin films.


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