TITLE

Hetero-epitaxy of perovskite oxides on GaAs(001) by molecular beam epitaxy

AUTHOR(S)
Liang, Y.; Kulik, J.; Eschrich, T. C.; Droopad, R.; Yu, Z.; Maniar, P.
PUB. DATE
August 2004
SOURCE
Applied Physics Letters;8/16/2004, Vol. 85 Issue 7, p1217
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Hetero-epitaxy of single-crystal perovskite SrTiO3 on GaAs(001) was achieved using molecular beam epitaxy. The growth was accomplished by deposition of a submonolayer of titanium on GaAs(001), followed by the co-deposition of strontium and titanium initiated at a low-temperature, low-oxygen-pressure condition. X-ray photoelectron spectroscopy showed that the Ti prelayer reacted with As and formed TiAs-like species on the As terminated GaAs(001) surface. Reflection-high-energy-electron diffraction showed that SrTiO3 grew coherently on the GaAs(001) at early stage of growth. This coherent behavior began to degrade when SrTiO3 thickness exceeded 20 Ã…. Cross-sectional transmission electron microscopy revealed an abrupt interface between SrTiO3 and GaAs and good crystallinity of the SrTiO3 film. An epitaxial relationship between SrTiO3 and GaAs was further confirmed by x-ray diffraction. The success of growth of SrTiO3 on GaAs paves the way for integration of various functional perovskite oxides with GaAs.
ACCESSION #
14085023

 

Related Articles

  • Molecular beam epitaxial growth and luminescence of InxGa1-xAs/InxAl1-xAs multiquantum wells on GaAs. Chang, Kevin H.; Berger, Paul R.; Singh, Jasprit; Bhattacharya, Pallab K. // Applied Physics Letters;7/27/1987, Vol. 51 Issue 4, p261 

    This letter reports the successful molecular beam epitaxial growth of high-quality InxGa1-xAs/InxAl1-xAs directly on GaAs. In situ observation of dynamic high-energy electron diffraction oscillations during growth of InxGa1-xAs on GaAs indicates that the average cation migration rates are...

  • Nd[sup 3+] incorporation in CaF[sub 2] layers grown by molecular beam epitaxy. Bausa, L.E.; Legros, R.; Munoz-Yague, A. // Applied Physics Letters;7/8/1991, Vol. 59 Issue 2, p152 

    Examines the growth of monocrystalline layers of Nd[sup 3+]-doped CaF[sub 2] on (100)CaF[sub 2] substrates by molecular beam epitaxy. Concentration of Nd in CaF[sub 2] films; Evaporation of CaF[sub 2] using a standard effusion cell equipped with a boron nitride crucible; Generation of the...

  • Ethyliodide n-type doping of Hg[sub 1-x]Cd[sub x]Te (x=0.24) grown by metalorganic molecular.... Benz II, R.G.; Conte-Matos, A. // Applied Physics Letters;11/28/1994, Vol. 65 Issue 22, p2836 

    Examines the growth of conductive n-type Hg[sub 1-x]cs[sub x]Te epitaxial layers by molecular beam epitaxy using iodine doping. Selection of ethyliodide as the dopant precursor; Increase in the low temperature electron concentration; Indication of electrical activity in the high electron...

  • Growth and optical characterization of InAs1-xSbx(0≤x≤1) on GaAs and on GaAs-coated Si by molecular beam epitaxy. Dobbelaere, W.; De Boeck, J.; Borghs, G. // Applied Physics Letters;10/30/1989, Vol. 55 Issue 18, p1856 

    Epitaxial layers of InAs1-xSbx(0≤x≤1) have been grown on GaAs and on GaAs-coated Si substrates by molecular beam epitaxy using tetrameric Sb and dimeric As sources. Room-temperature transmission spectroscopy was used to measure the optical band gap of the InAs1-xSbx layers and the...

  • Low temperature hydrothermal epitaxy and Raman study of heteroepitaxial BiFeO3 film. Rout, Dibyaranjan; Seung Ho Han; Kyoung-Seok Moon; Ho Gi Kim; Chae Il Cheon; Kang, Suk-Joong L. // Applied Physics Letters;9/21/2009, Vol. 95 Issue 12, p122509 

    By hydrothermal epitaxy, a heteroepitaxial BiFeO3 (BFO) film of ∼2.5 μm thickness was grown on a (100)-oriented single-crystalline SrTiO3 (STO) substrate at 200 °C, which is at least 250 °C lower than the conventional techniques used thus far. The x-ray diffraction pattern...

  • Growth of single crystal bcc α-Fe on ZnSe via molecular beam epitaxy. Prinz, G. A.; Jonker, B. T.; Krebs, J. J.; Ferrari, J. M.; Kovanic, F. // Applied Physics Letters;6/23/1986, Vol. 48 Issue 25, p1756 

    Molecular beam epitaxy methods have been used to grow high quality single crystal films of bcc α-Fe on fcc (zinc blende) ZnSe (001) epilayers on GaAs (001). These films were characterized by reflection high-energy electron diffraction, Auger electron spectroscopy, ferromagnetic resonance...

  • Critical thickness in epitaxial CdTe/ZnTe. Cibert, J.; Gobil, Y.; Dang, Le Si; Tatarenko, S.; Feuillet, G.; Jouneau, P. H.; Saminadayar, K. // Applied Physics Letters;1/15/1990, Vol. 56 Issue 3, p292 

    The critical thickness for coherent growth of CdTe on ZnTe by molecular beam epitaxy is assessed by reflection high-energy electron diffraction, low-temperature photoluminescence, and transmission electron microscopy. The value is found to be 5 monolayers for this high mismatch system (6%). As...

  • Gas source iodine n-type doping of molecular beam epitaxially grown CdTe. Rajavel, D.; Summers, C.J. // Applied Physics Letters;5/4/1992, Vol. 60 Issue 18, p2231 

    Examines the growth of highly conductive n-type cadmium telluride films through molecular beam epitaxy by iodine doping using ethyliodide. Increase of room-temperature electron concentration for dopant flow rate; Determination of the structural and optical properties by x-ray double crystal...

  • Observation of reflection high energy electron diffraction intensity oscillations during Si.... Mokler, S.M.; Liu, W.K. // Applied Physics Letters;5/4/1992, Vol. 60 Issue 18, p2255 

    Examines the growth of silicon(001) during gas source molecular beam epitaxy from disilane using reflection electron diffraction intensity oscillations. Factor affecting the performance of oscillations; Observation of strong and damped oscillations under two dimensional growth regime;...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics