Structure and thickness-dependent lattice parameters of ultrathin epitaxial Pr2O3 films on Si(001)

Schroeder, T.; Lee, T.-L.; Zegenhagen, J.; Wanger, C.; Zaumseil, P.; Müssig, H.-J.
August 2004
Applied Physics Letters;8/16/2004, Vol. 85 Issue 7, p1229
Academic Journal
Pr2O3 grown heteroepitaxially on Si(001) is a promising candidate for applications as a high-k dielectric in future silicon-based microelectronics devices. The technologically important thickness range from 1 to 10 nm has been investigated by synchrotron radiation-grazing incidence x-ray diffraction. The oxide film grows as cubic Pr2O3 phase with its (101) plane on the Si(001) substrate in form of two orthogonal rotation domains. Monitoring the evolution of the oxide unit-cell lattice parameters as a function of film thickness from 1 to 10 nm, the transition from almost perfect pseudomorphism to bulk values is detected.


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