TITLE

Absolute determination of film thickness from photoemission: Application to atomically uniform films of Pb on Si

AUTHOR(S)
Upton, M. H.; Miller, T.; Chiang, T.-C.
PUB. DATE
August 2004
SOURCE
Applied Physics Letters;8/16/2004, Vol. 85 Issue 7, p1235
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report on a method to unequivocally determine the thickness of a film in terms of atomic layers, as demonstrated by a study of Pb growth on Si(111). Deposition at low temperatures on a pretreated Si substrate results in atomically uniform Pb films. These films exhibit large monolayer-by-monolayer variations in electronic structure as observed by angle-resolved photoemission. Intense and sharp peaks derived from quantum-well states are observed for odd film thicknesses N=5, 7, and 9 monolayers, but not for the adjacent even film thicknesses N=4, 6, 8, and 10 monolayers. The dramatic differences facilitate an accurate calibration of the amount of Pb deposited.
ACCESSION #
14085017

 

Related Articles

  • BL5U at UVSOR-II for Three-dimensional Angle-resolved Photoemission Spectroscopy. Ito, Takahiro; Kimura, Shin-ichi; Im, Hojun; Nakamura, Eiken; Sakai, Masahiro; Horigome, Toshio; Soda, Kazuo; Takeuchi, Tsunehiro // AIP Conference Proceedings;2007, Vol. 879 Issue 1, p587 

    BL5U at UVSOR-II has been reconstructed in 2004’s for three-dimensional angle-resolved photoemission (3D-ARPES) study on solids and surfaces. The beamline is equipped with a helically/linearly polarized undulator, an old-type monochromator named as SGM-TRAIN designed in 1995’s, and...

  • Electron accumulation layer at the Cs-covered GaN(0001) n-type surface. Benemanskaya, G. V.; Vikhnin, V. S.; Shmidt, N. M.; Frank-Kamenetskaya, G. E.; Afanasiev, I. V. // Applied Physics Letters;8/23/2004, Vol. 85 Issue 8, p1365 

    We report on the observation of photoemission from the Cs/GaN(0001) n-type interface by excitation of visible light in the transparency region of GaN. Under Cs adsorption, sharp decrease in photoemission threshold up to 1.3 eV at 0.5 monolayer of Cs is found and shown to be due to formation of a...

  • Site specific Eu3+ stimulated emission in GaN host. Park, J. H.; Steckl, A. J. // Applied Physics Letters;1/2/2006, Vol. 88 Issue 1, p011111 

    We report the observation of site-specific Eu3+ stimulated emission in GaN:Eu laser structures. Two main Eu sites have been identified from emission peaks associated with the 5D0→7F2 transition during above band gap optical pumping with a pulsed N2 laser (337 nm): (a) Eux emitting at...

  • GeOx interface layer reduction upon Al-gate deposition on a HfO2/GeOx/Ge(001) stack. Rangan, Sylvie; Bersch, Eric; Bartynski, Robert Allen; Garfunkel, Eric; Vescovo, Elio // Applied Physics Letters;4/28/2008, Vol. 92 Issue 17, p172906 

    The metallization of HfO2/Ge by Al at room temperature was studied using photoemission and inverse photoemission. Upon deposition, Al reduces the GeOx interfacial layer between Ge and HfO2, and a thin Al2O3 layer is formed at the Al/HfO2 interface. The band alignment across the Al/HfO2/Ge stacks...

  • Magnetic field effect on the terahertz emission from nanometer InGaAs/AlInAs high electron mobility transistors. Dyakonova, N.; Teppe, F.; Łusakowski, J.; Knap, W.; Levinshtein, M.; Dmitriev, A. P.; Shur, M. S.; Bollaert, S.; Cappy, A. // Journal of Applied Physics;6/1/2005, Vol. 97 Issue 11, p114313 

    The influence of the magnetic field on the excitation of plasma waves in InGaAs/AlInAs lattice matched high electron mobility transistors is reported. The threshold source-drain voltage of the excitation of the terahertz emission shifts to higher values under a magnetic field increasing from 0...

  • Enhanced field emission of thin multiwall carbon nanotubes by electron multiplication from microchannel plate. Seelaboyina, Raghunandan; Jun Huang; Won Bong Choi // Applied Physics Letters;5/8/2006, Vol. 88 Issue 19, p194104 

    We report on a method to amplify electron emission from thin multiwall carbon nanotube (MWCNTs) field emitters using an electron multiplier microchannel plate. High density thin MWCNTs were synthesized by thermal chemical vapor deposition. Density of thin MWCNTs was increased by decreasing the...

  • Implications of Spin Vortex Scenario for 1/8-Doped Lanthanum Cuprates. Fine, Boris V. // Journal of Superconductivity & Novel Magnetism;Apr2011, Vol. 24 Issue 3, p1207 

    superlattice of spin vortices has been proposed in an earlier article as an alternative to the stripe interpretation of spin modulations in 1/8-doped lanthanum cuprates. The present article addresses several additional characteristics of the spin vortex lattice, namely: (i) the nature of...

  • A porous silicon diode as a source of low-energy free electrons at milli-Kelvin temperatures. Pilla, S.; Naberhuis, B.; Goodkind, J. // Journal of Applied Physics;7/15/2005, Vol. 98 Issue 2, p024508 

    We have developed a porous silicon (PS) diode that yields free-electron currents with energies <0.1 eV below 77 K. The power dissipated during emission is low so that pulses of electrons can be produced below 100 mK without raising the temperature of the system. Free electrons were generated in...

  • Li- and Er-codoped ZnO with enhanced 1.54 μm photoemission. Zhen Zhou; Komori, Toshitaka; Ayukawa, Tatsuya; Yukawa, Hiroshi; Morinaga, Masahiko; Koizumi, Atsushi; Takeda, Yoshikazu // Applied Physics Letters;8/29/2005, Vol. 87 Issue 9, p091109 

    Lithium ions were introduced into Er-doped ZnO specimens, and the codoping effect was investigated on the photoluminescence (PL) spectra around 1.54 μm. It was found that the Li addition increased the PL intensity by about 90 times at most, and also the strongest peak position shifted from...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics