Strained layer instabilities on vicinal surfaces: Ge0.8Si0.2 epitaxy on laser textured Si(001)

Watanabe, Fumiya; Cahill, David G.; Sukwon Hong; Greene, Joseph E.
August 2004
Applied Physics Letters;8/16/2004, Vol. 85 Issue 7, p1238
Academic Journal
Laser textured substrates enable a combinatorial study of strained layer growth morphology as a function of substrate miscut. Si(001) substrates with miscut θ<15° off (001) are produced by texturing with nanosecond laser pulses. Ge0.8Si0.2 growth rates are varied over a wide range, 1.7–90 monolayers per minute, at a fixed substrate temperature of 600 °C. Film morphologies at all growth rates show strong dependence on the local miscut θ within the dimpled regions of the substrate: the results demonstrate the importance of anisotropy in surface stiffness for the formation of epitaxial nanostructures. The length scales of all structures display a similar trend of decreasing size with increasing growth rate due to the suppression of coarsening at high growth rates.


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