Formation and optical properties of stacked GaN self-assembled quantum dots grown by metalorganic chemical vapor deposition

Hoshino, K.; Kako, S.; Arakawa, Y.
August 2004
Applied Physics Letters;8/16/2004, Vol. 85 Issue 7, p1262
Academic Journal
Multiple-layer stacked GaN quantum dots (QDs) with intense photoluminescence (PL) have been successfully grown by the Stranski-Krastanow growth mode in metalorganic chemical vapor deposition. Transmission electron microscopy (TEM) and scanning TEM analyses showed vertically aligned QDs resulting from a strain field induced by the buried islands. A redshift and linewidth narrowing of the PL spectra for the multilayered structures indicate that the size of the QDs becomes larger and more uniform throughout the layering process. The PL intensity increased with increasing the number of stacked layers, indicating that the QDs can be stacked without introducing new nonradiative recombination centers.


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