TITLE

Experimental evidence for index modulation by carrier depletion in SiGe/Si multiple quantum well structures

AUTHOR(S)
Lupu, A.; Marris, D.; Pascal, D.; Cercus, J.-L.; Cordat, A.; Thanh, V. Le; Laval, S.
PUB. DATE
August 2004
SOURCE
Applied Physics Letters;8/9/2004, Vol. 85 Issue 6, p887
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Experimental results for the refractive index variation obtained by hole depletion in SiGe/Si multiple quantum wells inserted in a reverse-biased p-i-n junction are reported. The electronic contribution to the index variation is unambiguously separated from the thermal one. Measured refractive index changes around 4.2×10-5 V-1 are in quite good agreement with modeling.
ACCESSION #
14019804

 

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