Experimental evidence for index modulation by carrier depletion in SiGe/Si multiple quantum well structures

Lupu, A.; Marris, D.; Pascal, D.; Cercus, J.-L.; Cordat, A.; Thanh, V. Le; Laval, S.
August 2004
Applied Physics Letters;8/9/2004, Vol. 85 Issue 6, p887
Academic Journal
Experimental results for the refractive index variation obtained by hole depletion in SiGe/Si multiple quantum wells inserted in a reverse-biased p-i-n junction are reported. The electronic contribution to the index variation is unambiguously separated from the thermal one. Measured refractive index changes around 4.2×10-5 V-1 are in quite good agreement with modeling.


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