TITLE

Modified metal-induced lateral crystallization using amorphous Ge/Si layered structure

AUTHOR(S)
Kanno, Hiroshi; Kenjo, Atsushi; Sadoh, Taizoh; Miyao, Masanobu
PUB. DATE
August 2004
SOURCE
Applied Physics Letters;8/9/2004, Vol. 85 Issue 6, p899
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Modified metal-induced lateral crystallization (MILC) using a‐Ge/a‐Si/Ni/SiO2 layered structures has been investigated. MILC growth velocity in the a‐Ge/a‐Si layered structures was enhanced by three times compared with that in the a‐Si single layers. As a result, poly-Si films with large areas (∼10 μm) were obtained in a short time annealing (<5 h) at 550 °C. It is speculated that crystal nucleation in the a‐Ge layers stimulated the bond rearrangement in the a‐Si layers, which enhanced the MILC velocity. This will be a powerful tool for realizing large poly-Si areas on insulating films for future system-in-displays.
ACCESSION #
14019800

 

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