Defect-enhanced photoconductive response of silicon-implanted borosilicate glass

Gong-Ru Lin; Chun-Jung Lin; Chi-Kuan Lin
August 2004
Applied Physics Letters;8/9/2004, Vol. 85 Issue 6, p935
Academic Journal
The E′δ-defect-enhanced photoconductivity of a metal–semiconductor–metal photodetector (MSM-PD) made on Si-implanted borosilicate glass (BSO:Si+) substrate is reported. The dark current of as-implanted BSO:Si+ MSM-PD is only 0.1 nA at bias of 70 V. The photocurrent of as-implanted BSO:Si+ MSM-PD illuminated at 488 nm is 0.91 nA, corresponding to photoconductive gain of 9.1 dB. The E′δ-defects luminescent at 520 nm are activated after 2 h annealing, which enhances the photocurrent of BSO:Si+ MSM-PD by one order of magnitude. Optimized responsivity, noise equivalent power, and detectivity of BSO:Si+ MSM-PD are 4.0 μA/W, 1.2×10-9 W/Hz1/2, and 3.5×105 cm Hz1/2/W, respectively. The electron paramagnetic resonance and etching-dependent photocurrent analysis corroborate the E′δ-defect-related photoconductivity of the BSO:Si+ glass.


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