Optical gain in homoepitaxial GaN

Juršenas, S.; Kurilčik, N.; Kurikčik, G.; Miasojedovas, S.; Žukauskas, A.; Suski, T.; Perlin, P.; Leszczynski, M.; Prystawko, P.; I. Grzegory
August 2004
Applied Physics Letters;8/9/2004, Vol. 85 Issue 6, p952
Academic Journal
Optical gain in GaN epilayers, grown by metalorganic chemical-vapor deposition technique on bulk GaN substrates is studied by means of time-resolved luminescence spectroscopy at room temperature. Both stimulated emission and carrier recombination rate are analyzed under high photoexcitation conditions that are close to laser operation regime. Homoepitaxial GaN shows a high value of optical gain coefficient g=7200 cm-1 estimated under intense pulsed excitation by a variable stripe method. For comparison, a GaN epilayer grown under identical conditions on sapphire shows a significantly lower value, g=2300 cm-1. Larger values of the optical gain coefficient achieved in homoepitaxial GaN are due to the lower density of nonradiative traps. This is proved by the carrier capture time that is estimated right after exhaustion of the inverted population, and has values of Ï„e=970 and 195 ps for homo- and heterolayers, respectively.


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