TITLE

Ultrathin gate oxide with a reduced transition layer grown by plasma-assisted oxidation

AUTHOR(S)
Hyun, S.; H., Buh, G.; Hong, S. H.; Koo, B. Y.; Shin, Y. G.; Jung, U. I.; Moon, J. T.; Cho, M.-H.; Chang, H. S.; Moon, D. W.
PUB. DATE
August 2004
SOURCE
Applied Physics Letters;8/9/2004, Vol. 85 Issue 6, p988
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Ultrathin SiO2 grown by plasma-assisted oxidation (plasma oxide) has been investigated by high-resolution x-ray photoemission spectroscopy and medium energy ion scattering spectroscopy. We found that the plasma oxide grown at the low temperature of 400°C has a thinner transition layer than conventional thermal oxide. This thinner transition layer in the plasma oxide not only decreased the gate leakage current effectively, but also enhanced the reliability of the gate oxide. We attribute these electrical properties of the plasma oxide to the reduction of the transition layer.
ACCESSION #
14019769

 

Related Articles

  • Charge build-up in Si-processing plasma caused by electron shading effect. Kamata, T.; Arimoto, H. // Journal of Applied Physics;9/1/1996, Vol. 80 Issue 5, p2637 

    Presents a study that investigated the influence of electron temperature and of bias on charge build-up caused by electron shading in inductively-coupled plasmas at 2 to 40 mTorr in argon. Background on plasma charging damage to the gate-oxide of metal oxide semiconductor field effect...

  • Comparison of thermal oxidation and plasma oxidation of 4H-SiC (0001) for surface flattening. Hui Deng; Katsuyoshi Endo; Kazuya Yamamura // Applied Physics Letters;3/10/2014, Vol. 104 Issue 10, p1 

    The thermal oxidation and water vapor plasma oxidation of 4H-SiC (0001) were investigated. The initial oxidation rate of helium-based atmospheric-pressure plasma oxidation was six times higher than that of thermal oxidation. The oxide-SiC interface generated by plasma oxidation became flatter...

  • Hydrogenation effect in an n-channel metal-oxide-semiconductor field-effect transistor. Choong Hoon Lee; Choochon Lee // Applied Physics Letters;1/14/1991, Vol. 58 Issue 2, p134 

    Studies the effects of hydrogen plasma exposure on the characteristics of a metal oxide semiconductor field-effect transistor. Changes in maximum transconductance and subthreshold slope; Effects of the helium and hydrogen plasma; Generation of excess interface traps by hydrogenation.

  • NSTX tangential divertor camera. Roquemore, A. L.; Biewer, Ted; Johnson, D.; Zweben, S. J.; Nishino, Nobuhiro; Soukhanovskii, V. A. // Review of Scientific Instruments;Oct2004 Part I & II, Vol. 75 Issue 10, p4190 

    Strong magnetic field shear around the divertor x-point is numerically predicted to lead to strong spatial asymmetries in turbulence driven particle fluxes. To visualize the turbulence and associated impurity line emission near the lower x-point region, a new tangential observation port has been...

  • Analysis of visible light images from a fast-gated intensified charge coupled device camera during flux rope interaction and magnetic reconnection. Hemsing, E.; Furno, I.; Intrator, T.; Wei, D. // Review of Scientific Instruments;Oct2004 Part I & II, Vol. 75 Issue 10, p4106 

    We present the experimental setup and analysis of visible light images from a fast double-gated intensified charge coupled device (CCD) camera currently being used on the reconnection scaling experiment (RSX) at the Los Alamos National Laboratory. In RSX, externally driven free-boundary flux...

  • Installation of a fast framing visible camera on KSTAR. Chung, Jinil; Lee, Deok Kyo; Seo, Dongcheol; Choi, Myoung Choul // Review of Scientific Instruments;Oct2008, Vol. 79 Issue 10, p10F510 

    Visible camera technologies have made remarkable progress in recent years, and the fast camera has proven itself to be a capable imaging diagnostic in studies of specific fusion plasma issues such as the start-up physics, plasma wall interactions, edge-localized modes, and disruptions. For the...

  • Effects of fluorine incorporation and forming gas annealing on high-k gated germanium metal-oxide-semiconductor with GeO2 surface passivation. Ruilong Xie; Wei He; Mingbin Yu; Chunxiang Zhu // Applied Physics Letters;8/18/2008, Vol. 93 Issue 7, p073504 

    Effective pregate surface passivation and postgate treatments are very important to optimize the germanium metal-oxide-semiconductor (MOS) interface quality. In this work, pregate GeO2 surface passivation and postgate treatments including CF4-plasma treatment and forming gas annealing are...

  • Fabrication of Ultra-Shallow Junctions on 300 mm Wafers Using the Plasma Immersion Implanter PULSION® Followed by Spike Annealing Using LEVITOR Furnace. Torregrosa, Frank; Etienne, Hasnaa; Sempere, Guillaume; Mathieu, Gilles; Roux, Laurent; Milesi, Frederic; Gonzatti, Frederic; Pages, Xavier // AIP Conference Proceedings;11/3/2008, Vol. 1066 Issue 1, p477 

    Thanks to the European Project SEA-NET, an industrial version of the IBS Plasma Ion Implantation tool has been installed in LETI for the fabrication of Ultra-Shallow Junction for 45 & 32 nm CMOS on 200 and 300 mm wafers. In this study, we present first doping results on 300 mm wafers using BF3...

  • Key Technologies for Ultra High Dose CMOS Applications. Jeon, Y.; Koo, I.; Oh, J.; Lee, S. B.; Butterbaugh, J.; Jin, S.; Lee, J.; Rouh, K.; Ju, M.; Jeon, S.; Ku, J.; Lee, S. W.; Ok, M. T.; Lee, A.; Kim, K.; Ju, K. J.; Park, J. W.; Singh, V. // AIP Conference Proceedings;11/3/2008, Vol. 1066 Issue 1, p133 

    The trend towards shrinking advanced microelectronic Logic and DRAM devices will require ultra high dose implantation. One ultra high dose application in DRAM, being rapidly adopted in production is Dual Poly Gate (DPG). Three main challenges existed for the adoption of this high dose dual poly...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics