Pumping intensity dependent surface charge accumulation and redshifted microphotoluminescence of silicon-implanted quartz

Gong-Ru Lin; Kuo-Cheng Yu; Chun-Jung Lin; Hao-Chung Kuo; Miao-Chia Ou-Yang
August 2004
Applied Physics Letters;8/9/2004, Vol. 85 Issue 6, p1000
Academic Journal
The pumping-intensity dependency of nanocrystallite silicon (nc-Si) related microphotoluminescence (μ-PL) from multirecipe Si-implanted quartz is characterized. After annealing at 1100°C for 3 h, theμ-PL at 724 nm contributed by nc-Si with a diameter of about 4 nm is maximized. By increasing the pumping intensity from 10 kW/cm2 to 300 kW/cm2, the μ-PLs of 1 and 3-h-annealed Si-implanted quartz samples are redshifted by <1.2 and 11 nm, respectively. The μ-PL of 3-h-annealed sample further redshifts by 2.5 nm after pumping at 300 kW/cm2 for h. Such a redshift in PL is attributed to the anomalous quantum Stark effect under strong illumination, which photoionizes the buried nc-Si and initiates an electric field beneath the surface of Si-implanted quartz. The measurement of accumulating charges and voltage drop during illumination primarily elucidate the correlation between redshift in PL and the photoionized nc-Si induced surface electric field.


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