Fabrication of nickel oxide nanoparticles in SiO2 by metal-ion implantation combined with thermal oxidation

Amekura, H.; Umeda, N.; Takeda, Y.; Lu, J.; Kishimoto, N.
August 2004
Applied Physics Letters;8/9/2004, Vol. 85 Issue 6, p1015
Academic Journal
A method is proposed to synthesize oxide nanoparticles in insulators, using metal-ion implantation and following thermal oxidation, which introduces less damage compared to the sequential implantation of metal ions and oxygen ions. Ni-oxide nanoparticles are formed in O2 gas flow at ∼800 °C for 1 h, through thermal oxidation of Ni metal nanoparticles, which were introduced in SiO2 by charging-free negative ion implantation of 60 keV. After the oxidation, optical absorption in the visible region, which is due to Ni metal nanoparticles in the specimen, disappears, and a steep absorption edge of insulator NiO appears around ∼4 eV. Simultaneously, the large magnetization of Ni metal nanoparticles changes to a weak magnetization of antiferromagnetic NiO nanoparticles. The nanoparticle formation is confirmed by transmission electron microscopy observation.


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