TITLE

Long-wavelength laser based on self-assembled InAs quantum dots in InAlGaAs on InP (001)

AUTHOR(S)
Kim, Jin Soo; Lee, Jin Hong; Hong, Sung Ui; Han, Won Seok; Kwack, Ho-Sang; Lee, Chuk Wook; Oh, Dae Kon
PUB. DATE
August 2004
SOURCE
Applied Physics Letters;8/9/2004, Vol. 85 Issue 6, p1033
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Seven stacks of self-assembled InAs quantum dots (QDs) separated by 28 nm thick InAlGaAs barriers were grown on InP (001) substrate by a solid-source molecular-beam epitaxy and were investigated by cross-sectional transmission electron microscopy and photoluminescence spectroscopy. Gain guided broad-area lasers with a stripe width of 75 μm were fabricated by using the seven-stacked InAs QD layers with the InAlGaAs–InAlAs material system on InP (001). The lasing operation from InAs QDs was observed up to 260 K and the characteristic temperature of the uncoated QD laser calculated from the temperature dependence of threshold current density was 377 K for temperatures up to 200 K, and 138 K above 200 K. The drastic decrease in the characteristic temperature above 200 K was mainly related to the thermal behavior of carriers in QDs, and possibly the thermal coupling of the QDs to the wetting layer and the waveguide region.
ACCESSION #
14019754

 

Related Articles

  • SiO2/PbTe quantum-dot multilayer production and characterization. Rodríguez, E.; Jimenez, E.; Padilha, L. A.; Neves, A. A. R.; Jacob, G. J.; César, C. L.; Barbosa, L. C. // Applied Physics Letters;3/14/2005, Vol. 86 Issue 11, p113117 

    We report the fabrication of multilayer structures containing layers of PbTe quantum dots (QDs) spaced by 15–20 nm thick SiO2 layers. The QDs were grown by the laser ablation of a PbTe target using the second harmonic of Nd:YAG laser in an argon atmosphere. The SiO2 layers were fabricated...

  • Development principles and production of paired PbS quantum dots. D. Mohanta; H. Bora; N. Dutta; A. Choudhury // European Physical Journal - Applied Physics;Feb2008, Vol. 41 Issue 2, p129 

    We report for the first time, to the best of our knowledge, an inexpensive fabrication procedure for obtaining perfectly coupled PbS quantum dots. Evidence of quantum dot pairing (each, 10?12?nm) was confirmed by transmission electron microscopy, and the stability with aging was checked by...

  • Structural Analysis of InAs Quantum Dashes Grown on InP Substrate by Scanning Transmission Electron Microscopy. Sauerwald, A.; Kümmell, T.; Bacher, G.; Somers, A.; Schwertberger, R.; Reithmaier, J. P.; Forchel, A. // AIP Conference Proceedings;2005, Vol. 772 Issue 1, p591 

    We applied plan-view and cross-sectional Scanning Transmission Electron Microscopy (STEM) for studying InAs quantum dashes embedded between In0.53Ga0.23Al0.24As barriers grown on InP substrate. Chemically sensitive Z-contrast micrographs give direct access to the chemical composition of the...

  • The Role of Decoupled Electron and Hole Dynamics in the Turn-on Behavior of Semiconductor Quantum-Dot Lasers. Lüdge, Kathy; Malić, Ermin; Schöll, Eckehard // AIP Conference Proceedings;1/4/2010, Vol. 1199 Issue 1, p475 

    We analyze the complex turn-on behavior of semiconductor quantum-dot lasers which is determined by the nonlinearity of the carrier-carrier scattering rates. Our model consists of a combination between a microscopic approach used for calculating the non-radiative scattering rates and a rate...

  • Vertical stacks of shape-engineered InAs/InAlGaAs quantum dot and its influences on the lasing characteristics. Kim, Jin Soo; Lee, Cheul-Ro; Choi, Byung Seok; Kwack, Ho-Sang; Lee, Chul Wook; Sim, Eun Deok; Oh, Dae Kon // Applied Physics Letters;4/9/2007, Vol. 90 Issue 15, p153111 

    The formation characteristics on the vertical stacks of shape-engineered InAs/InAlGaAs quantum dots (QDs), which were formed by the alternate growth method (AGQDs), were studied in terms of the modulation in strain field and phase separation. The threshold current of the broad-area laser diodes...

  • Pulse width narrowing due to dual ground state emission in quantum dot passively mode locked lasers. Mesaritakis, Charis; Simos, Christos; Simos, Hercules; Mikroulis, Spiros; Krestnikov, Igor; Syvridis, Dimitris // Applied Physics Letters;5/24/2010, Vol. 96 Issue 21, p211110 

    We present an experimental investigation of the emission properties of a multisection InGaAs quantum dot passively mode locked laser under dual waveband emission from the ground state (GS). A mode locking regime directly related to the GS splitting has been depicted. It is related to significant...

  • Electrically pumped quantum post vertical cavity surface emitting lasers. Kim, Hyochul; Rakher, Matthew T.; Bouwmeester, Dirk; Petroff, Pierre M. // Applied Physics Letters;3/30/2009, Vol. 94 Issue 13, p131104 

    We demonstrate low threshold electrically pumped lasing in oxide apertured vertical cavity surface emitting lasers with quantum posts (QPs) as the active medium. A lasing threshold current as low as 12 μA is achieved at 7 K and room temperature continuous wave lasing is also demonstrated in...

  • One-dimensional postwetting layer in InGaAs/GaAs(100) quantum-dot chains. Wang, Zh. M.; Mazur, Yu. I.; Shultz, J. L.; Salamo, G. J.; Mishima, T. D.; Johnson, M. B. // Journal of Applied Physics;2/1/2006, Vol. 99 Issue 3, p033705 

    Long chains of quantum dots formed in InGaAs/GaAs(100) multiple layers have been systematically investigated by scanning electron, transmission electron, and atomic force microscopies. In addition to the usual two-dimensional wetting layer involved in the Stranski-Krastanov growth, we have...

  • Atomic scale characterization of buried InxGa1-xAs quantum dots using pulsed laser atom probe tomography. Müller, M.; Cerezo, A.; Smith, G. D. W.; Chang, L.; Gerstl, S. S. A. // Applied Physics Letters;6/9/2008, Vol. 92 Issue 23, p233115 

    Atom probe tomography (APT) has been used to study InxGa1-xAs quantum dots buried in GaAs. The dots have an average base width of 16.1±1.1 nm and height of 3.5±0.3 nm, but a wide range of sizes. APT composition profiles across the dots are similar to a previous study by cross-sectional...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics