TITLE

Noise reduction in GaN-based radio frequency surface acoustic wave filters

AUTHOR(S)
Petroni, S.; Tripoli, G.; Combi, C.; Vigna, B.; De Vittorio, M.; Tadaro, M. T.; Epifani, G.; Cingolani, R.; Passaseo, A.
PUB. DATE
August 2004
SOURCE
Applied Physics Letters;8/9/2004, Vol. 85 Issue 6, p1039
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
In this work we have fabricated and characterized GaN based surface acoustic wave (SAW) delay lines grown by metal organic chemical vapor deposition (MOCVD) on sapphire substrate. The acoustic wave velocity of 0th Rayleigh and Sezawa modes, and the piezoelectric electromechanical coupling constant have been measured for different wave numbers in a 2 μm-thick layer. The acoustic velocity resulted to be independent from the layer resistivity, which strongly affects the noise level. Through the introduction of a highly resistive GaN buffer layer, a noise level as low as -70 dB has been measured. This result has been attributed to a reduced coupling between the input and output terminals.
ACCESSION #
14019752

 

Related Articles

  • Metalorganic chemical vapor deposition of high-purity GaAs using tertiarybutylarsine. Haacke, G.; Watkins, S. P.; Burkhard, H. // Applied Physics Letters;5/15/1989, Vol. 54 Issue 20, p2029 

    The growth of high-purity gallium arsenide using tertiarybutylarsine (TBA) and trimethylgallium is reported. The availability of high-purity TBA has permitted the growth of material with liquid-nitrogen mobilities of up to 80 000 cm2/V s, the highest value yet reported for growth with any alkyl...

  • In-situ observation of MOVPE epitaxial growth. Richter, W. // Applied Physics A: Materials Science & Processing;2002, Vol. 75 Issue 1, p129 

    Metal organic vapour phase epitaxy (MOVPE) is nowadays one of the leading techniques for epitaxial growth. While the processes in the gas phase of MOVPE are reasonably well understood, the processes on the growing surface are not. This situation is in contrast to molecular beam epitaxy (MBE),...

  • Buffer layer effects on residual stress in InP on Si substrates. Sugo, Mitsuru; Yamaguchi, Masafumi // Applied Physics Letters;5/1/1989, Vol. 54 Issue 18, p1754 

    Heteroepitaxial growth of InP on Si(100) substrates using InP direct growth, and with a GaAs or GaP buffer layer has been grown by organometallic vapor phase epitaxy (OMVPE). The effects of buffer layers on residual stress in InP films are examined. For InP/(GaP buffer layer)/Si, stress...

  • Scattering mechanisms and defects in InP epitaxially grown on (001) Si substrates. Hansen, K.; Peiner, E.; Tang, G.-P.; Bartels, A.; Schlachetzki, A. // Journal of Applied Physics;10/15/1994, Vol. 76 Issue 8, p4705 

    Provides information on a study that examined carrier concentration and mobility of unintentionally doped InP layers grown directly on silicon using metal-organic vapor-phase epitaxy. Methodology of the study; Results of the study; Conclusion.

  • On the origin of electrically active defects in AlGaN alloys grown by organometallic vapor phase epitaxy. Polyakov, A. Y.; Shin, M.; Freitas, J. A.; Skowronski, M.; Greve, D. W.; Wilson, R. G. // Journal of Applied Physics;12/1/1996, Vol. 80 Issue 11, p6349 

    Presents a study which investigated the origin of electrically active defects in aluminum gallium nitride (AlGaN) alloys grown by organometallic vapor phase epitaxy. Composition dependence of ionization energies of dominant donors; Values of energy gaps for AlGaN layers; Composition dependence...

  • Improved photoluminescence of InGaAsN–(In)GaAsP quantum well by organometallic vapor phase epitaxy using growth pause annealing. Tansu, Nelson; Yeh, Jeng-Ya; Mawst, Luke J. // Applied Physics Letters;5/5/2003, Vol. 82 Issue 18, p3008 

    The metalorganic chemical vapor deposition of a highly strained InGaAsN quantum-well (QW) surrounded by (In)GaAsP direct barrier layers is investigated. We found that growth pause annealing with ASH[sub 3], performed immediately before and after the growth of the QW, significantly improves the...

  • Effects of edge dislocations and intentional Si doping on the electron mobility of n-type GaN films. Zhao, D. G.; Hui Yang; Zhu, J. J.; Jiang, D. S.; Liu, Z. S.; Zhang, S. M.; Wang, Y. T.; Liang, J. W. // Applied Physics Letters;9/11/2006, Vol. 89 Issue 11, p112106 

    The effects of dislocations and Si doping on the electrical properties of n-type GaN grown by metal organic chemical vapor deposition (MOCVD) are investigated. It is found that both electron mobility and carrier concentration are strongly influenced by edge dislocations. A moderate Si doping...

  • Comparative study of trap densities of states in CdTe/CdS solar cells. Proskuryakov, Y. Y.; Major, J. D.; Durose, K.; Barrioz, V.; Irvine, S. J. C.; Jones, E. W.; Lamb, D. // Applied Physics Letters;10/8/2007, Vol. 91 Issue 15, p153505 

    Density of deep and shallow states has been investigated in three different kinds of CdTe/CdS samples, two of which were grown by metal-organic chemical vapor deposition (MOCVD) and one by close-space sublimation (CSS) methods. The MOCVD samples were p doped by As and grown either with or...

  • Emission properties of a-plane GaN grown by metal-organic chemical-vapor deposition. Paskov, P. P.; Schifano, R.; Monemar, B.; Paskova, T.; Figge, S.; Hommel, D. // Journal of Applied Physics;11/1/2005, Vol. 98 Issue 9, p093519 

    We report on the emission properties of nonpolar a-plane GaN layers grown on r-plane sapphire. Temperature-, excitation-density-, and polarization-dependent photoluminescences and spatially resolved microphotoluminescence and cathodoluminescence are employed in order to clarify the nature of the...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics