TITLE

Correlation between the 1/f noise parameters and the effective low-field mobility in HfO2 gate dielectric n-channel metal–oxide–semiconductor field-effect transistors

AUTHOR(S)
Simoen, E.; Mercha, A.; Claeys, C.; Young, E.
PUB. DATE
August 2004
SOURCE
Applied Physics Letters;8/9/2004, Vol. 85 Issue 6, p1057
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
In this work, the parameters extracted from the 1/f noise in silicon n-channel metal–oxide–semiconductor field-effect transistors with different HfO2/SiO2 gate stacks, corresponding with different equivalent oxide thickness (EOT) are reported and their relationship with the effective low-field mobility is studied. It is found that the 1.5 nm EOT transistors show lower 1/f noise, from which a lower effective trap density is derived, compared with their 2 nm EOT counterparts. In addition, the gate stack with the higher trap density yields a lower mobility and a lower mobility scattering coefficient.
ACCESSION #
14019746

 

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