TITLE

Deposition of Ti2AlC and Ti3AlC2 epitaxial films by magnetron sputtering

AUTHOR(S)
Wilhelmsson, O.; Palmquist, J.-P.; Nyberg, T.; Jansson, U.
PUB. DATE
August 2004
SOURCE
Applied Physics Letters;8/9/2004, Vol. 85 Issue 6, p1066
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Thin films of the Mn+1AXn-phases Ti2AlC and Ti3AlC2 have been deposited by dc magnetron sputtering. In agreement with the Ti–Si–C system, the MAX-phase nucleation is strongly temperature dependent. At 900 °C epitaxial films of Ti2AlC and Ti3AlC2 were grown, but at 700 °C only a cubic (Ti,Al)C phase was formed. In addition, a perovskite carbide, Ti3AlC was grown at 800 °C. A bulk resistivity of 0.51 μΩ m, 0.44 μΩ m, and 1.4 μΩ m was measured for the Ti3AlC2, Ti2AlC, and Ti3AlC films deposited at 900 °C, respectively. By nanoindentation the hardness and Young’s module was determined for an epitaxial Ti3AlC2 film to 20 GPa and 260 GPa, respectively.
ACCESSION #
14019743

 

Related Articles

  • Self-organization in film nucleation in the high-T[sub c] superconductor Y-Ba-Cu-O system. Gol’man, E. K.; Gol’drin, V. I.; Plotkin, D. A.; Razumov, S. V.; Kukushkin, S. A; Osipov, A. V. // Physics of the Solid State;Feb97, Vol. 39 Issue 2, p189 

    The process of new-phase nucleation in the YBa[sub 2]Cu[sub 3]O[sub 7 - x] system deposited by magnetron sputtering has been studied. The first experimental observation of the phenomenon of temporal self-organization in the course of new-phase formation, which was predicted theoretically, is...

  • Preparation and crystallization of Pb(Zr[sub 0.95] Ti[sub 0.05] )O[sub 3] thin films deposited by radio-frequency magnetron sputtering with a stoichiometric ceramic target. Lu, C.J.; Shen, H.M. // Applied Physics A: Materials Science & Processing;1998, Vol. 67 Issue 2, p253 

    Abstract. High-Zr-content lead zirconate titanate Pb(Zr[sub 0.95]Ti[sub 0.05])O[sub 3] (PZT 95/5) thin films of perovskite structure were prepared on various substrates by the radiofrequency magnetron sputtering with a stoichiometric ceramic target. The crystal structure of the films showed a...

  • Fabrication and physical properties of double perovskite SrLaVMoO6 thin films. Matsushima, H.; Gotoh, H.; Miyawaki, T.; Ueda, K.; Asano, H. // Journal of Applied Physics;Apr2011, Vol. 109 Issue 7, p07E321 

    SrLaVMoO6 thin films have been grown on various substrates by magnetron sputtering in Ar+H2 mixture gas. High-quality c-axis oriented SrLaVMoO6 films have been obtained in the growth temperature of 630 °C and Ar + 5% H2 mixture gas. The SrLaVMoO6 films showed low resistive metallic behavior,...

  • Large-area growth of vertically aligned ZnO pillars by radio-frequency magnetron sputtering. Huang, J. H.; Wang, C. Y.; Liu, C. P.; Chu, W. H.; Chang, Y. J. // Applied Physics A: Materials Science & Processing;Jul2007, Vol. 87 Issue 4, p749 

    A new method for fabricating large-area well-aligned ZnO pillars, solely using radio-frequency magnetron sputtering, is reported. A mixture of argon and hydrogen gases was used as the plasma source, acting as a reduction agent. The ZnO pillars grow from a ZnO buffer layer with a ZnMgO nucleation...

  • Formation of Island Structures in the Course of Deposition of Weakly Supersaturated Aluminum Vapors. Perekrestov, V. I.; Koropov, A. V.; Kravchenko, S. N. // Physics of the Solid State;Jun2002, Vol. 44 Issue 6, p1181 

    The formation of island structures in the course of deposition of weakly supersaturated aluminum vapors is investigated by transmission electron (TEM) and scanning electron (SEM) microscopies and electron microdiffraction. The aluminum layers are prepared by dc magnetron sputtering in a...

  • High-pressure magnetron sputtering: gas-phase processes. Znamenskii, A. G.; Marchenko, V. A. // Technical Physics;Jul98, Vol. 43 Issue 7, p766 

    Thermalization of the energetic atoms emitted by a target at pressures up to 100 Pa causes heating and motion of the gaseous medium. The temperature and velocity of the gas have been measured as a function of the magnetron-discharge parameters. This paper presents the dependences of the...

  • Stable current oscillations accompanying magnetron sputtering of oxide targets. Abduev, A. Kh.; Magomedov, A. M. // Technical Physics Letters;Mar98, Vol. 24 Issue 3, p192 

    Undamped total current oscillations were observed for the first time during dc magnetron sputtering of oxide ceramic targets. It was shown that these oscillations were caused by the continuous generation of atomic oxygen as a result of chemisorption-desorption processes at the surface of the...

  • A new sputtering device of radio-frequency magnetron discharge using a rectangular hollow-shaped electrode Ohtsu, Yasunori; Tsurume, Yoshinobu; Fujita, Hiroharu // Review of Scientific Instruments;Apr98, Vol. 69 Issue 4, p1833 

    Develops a sputtering device of radio-frequency magnetron discharge using a rectangular hollow-shaped electrode. Measurement of the spatial structures of the electron density, etching rate of copper (Cu) and the deposition rate; Resistivity of the deposited Cu thin film; Arrangement of Cu under...

  • Magnetron sputter deposition with high levels of metal ionization. Rossnagel, S.M.; Hopwood, J. // Applied Physics Letters;12/13/1993, Vol. 63 Issue 24, p3285 

    Examines the development of magnetron sputter deposition technique with high levels of metal ionization. Observation of significant cooling of the plasma electron temperature; Combination of conventional magnetron sputter deposition with radio frequency inductively coupled (RFI) plasma;...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics