Deposition of Ti2AlC and Ti3AlC2 epitaxial films by magnetron sputtering

Wilhelmsson, O.; Palmquist, J.-P.; Nyberg, T.; Jansson, U.
August 2004
Applied Physics Letters;8/9/2004, Vol. 85 Issue 6, p1066
Academic Journal
Thin films of the Mn+1AXn-phases Ti2AlC and Ti3AlC2 have been deposited by dc magnetron sputtering. In agreement with the Ti–Si–C system, the MAX-phase nucleation is strongly temperature dependent. At 900 °C epitaxial films of Ti2AlC and Ti3AlC2 were grown, but at 700 °C only a cubic (Ti,Al)C phase was formed. In addition, a perovskite carbide, Ti3AlC was grown at 800 °C. A bulk resistivity of 0.51 μΩ m, 0.44 μΩ m, and 1.4 μΩ m was measured for the Ti3AlC2, Ti2AlC, and Ti3AlC films deposited at 900 °C, respectively. By nanoindentation the hardness and Young’s module was determined for an epitaxial Ti3AlC2 film to 20 GPa and 260 GPa, respectively.


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