1.3 to 1.5 μm light emission from InGaAs/GaAs quantum wells

Wang, S. M.; Zhao, Q. X.; Wang, X. D.; Wei, Y. Q.; Sadeghi, M.; Larsson, A.
August 2004
Applied Physics Letters;8/9/2004, Vol. 85 Issue 6, p875
Academic Journal
We propose using dipole δ-doping across highly strained InGaAs/GaAs quantum wells (QWs) to achieve light emission at wavelengths in the range of 1.3–1.55 μm. For In0.3Ga0.7As/GaAs single QWs, we demonstrate that the photoluminescence (PL) wavelength increases with the doping concentration. With a transition energy reduction as large as 370 meV, PL emission at 1.548 μm at room temperature is realized. Broad area lasers with dipole δ-doping reveal longer lasing wavelengths than those of undoped lasers, although the wavelength redshift is much less than in the PL case. © 2004 American Institute of Physics.


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