Capture coefficients of free excitons by shallow acceptors and donor in gallium arsenide

Glinchuk, K. D.; Litovchenko, N. M.; Stritchuk, O. N.
July 2003
Semiconductor Physics, Quantum Electronics & Optoelectronics;2003, Vol. 6 Issue 3, p274
Academic Journal
An analysis of the 4.2 K exciton luminescence spectra of semi-insulating GaAs crystals with different concentrations of shallow acceptors (C) and donors (Si) is given. As a result, the 4.2 K capture coefficients of free excitons by shallow neutral acceptors [bA0X = = (4 � 2)- 10-8 cm�/s] and donors [bD0X = (1.5 � 0.8) 10-7 cm�/s] are found and also an estimate of the capture coefficient of free excitons by ionized shallow donors was made [bD+X >> bD0X].


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