Improved performance of 1.3 μm multilayer InAs quantum-dot lasers using a high-growth-temperature GaAs spacer layer

Liu, H. Y.; Sellers, I. R.; Badcock, T. J.; Mowbray, D. J.; Skolnick, M. S.; Groom, K. M.; Gutiérrez, M.; Hopkinson, M.; Ng, J. S.; David, J. P. R.; Beanland, R.
August 2004
Applied Physics Letters;8/2/2004, Vol. 85 Issue 5, p704
Academic Journal
The use of a high-growth-temperature GaAs spacer layer is demonstrated to significantly improve the performance of 1.3 μm multilayer self-assembled InAs/InGaAs dot-in-a-well lasers. The high-growth-temperature spacer layer inhibits threading dislocation formation, resulting in enhanced electrical and optical characteristics. Incorporation of these spacer layers allows the fabrication of multilayer quantum-dot devices emitting above 1.3 μm, with extremely low room-temperature threshold current densities and with operation up to 105°C.


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