Improved performance of 1.3 μm multilayer InAs quantum-dot lasers using a high-growth-temperature GaAs spacer layer

Liu, H. Y.; Sellers, I. R.; Badcock, T. J.; Mowbray, D. J.; Skolnick, M. S.; Groom, K. M.; Gutiérrez, M.; Hopkinson, M.; Ng, J. S.; David, J. P. R.; Beanland, R.
August 2004
Applied Physics Letters;8/2/2004, Vol. 85 Issue 5, p704
Academic Journal
The use of a high-growth-temperature GaAs spacer layer is demonstrated to significantly improve the performance of 1.3 μm multilayer self-assembled InAs/InGaAs dot-in-a-well lasers. The high-growth-temperature spacer layer inhibits threading dislocation formation, resulting in enhanced electrical and optical characteristics. Incorporation of these spacer layers allows the fabrication of multilayer quantum-dot devices emitting above 1.3 μm, with extremely low room-temperature threshold current densities and with operation up to 105°C.


Related Articles

  • Continuous-wave Lasing of Single-Mode Metamorphic Quantum Dot Lasers for the 1.5-μm Spectral Region. Karachinsky, L. Ya.; Kettler, T.; Gordeev, N. Yu.; Novikov, I. I.; Maximov, M. V.; Shernyakov, Yu. M.; Kryzhanovskaya, N. V.; Zhukov, A. E.; Semenova, E. S.; Vasil'ev, A. P.; Ustinov, V. M.; Ledentsov, N. N.; Kovsh, A. R.; Shchukin, V. A.; Mikhrin, S. S.; Lochmann, A.; Schulz, O.; Reissmann, L.; Bimberg, D. // Semiconductors;Dec2005, Vol. 39 Issue 12, p1415 

    Lasers based on InAs/InGaAs quantum dots grown on metamorphic (In,Ga,Al)As layers deposited by MBE on GaAs substrates exhibited emission near 1.5 μm with a differential quantum efficiency of about 50%. The narrow-stripe lasers operate in a single transverse mode and withstand continuous...

  • Temperature-dependent photoluminescence study of 1.3 μm undoped InAs/InGaAs/GaAs quantum dots. Ngo, C. Y.; Yoon, S. F.; Lim, D. R.; Wong, Vincent; Chua, S. J. // Applied Physics Letters;7/28/2008, Vol. 93 Issue 4, p041912 

    InAs/InGaAs/GaAs quantum dot (QD) structures are commonly employed for 1.3 μm emission. However, reduction in the thermal stability of the undoped InAs/InGaAs/GaAs QD lasers has been observed upon inclusion of the InxGa1-xAs strain-reducing layer. In this work, the effect of QD growth...

  • Lasing spectra of 1.55 μm InAs/InP quantum dot lasers: theoretical analysis and comparison with the experiments. Veselinov, K.; Grillot, F.; Gioannini, M.; Montrosset, I.; Homeyer, E.; Piron, R.; Even, J.; Bekiarski, A.; Loualiche, S. // Optical & Quantum Electronics;Feb2008, Vol. 40 Issue 2-4, p227 

    In this paper, a theoretical model is used to investigate the lasing spectrum properties of InAs/InP (113)B quantum dot (QD) lasers emitting at 1.55 μm. The numerical model used is based on a multi-population rate equation (MPRE) analysis. It takes into account the effect of the competition...

  • Continuous-wave operation of 1.5 μm InGaAs/InGaAsP/InP quantum dot lasers at room temperature. Kim, H. D.; Jeong, W. G.; Lee, J. H.; Yim, J. S.; Lee, D.; Stevenson, R.; Dapkus, P. D.; Jang, J. W.; Pyun, S. H. // Applied Physics Letters;8/22/2005, Vol. 87 Issue 8, p083110 

    Continuous-wave operation at room temperature from InGaAs/InGaAsP/InP quantum dot (QD) laser diodes (LD) has been achieved. A ridge waveguide QD LD with 7 QD-stacks in the active region lases at 1.503 μm at 20 °C and that with 5 QD-stacks lases at 1.445 μm at room temperature. The shift...

  • InAs quantum dots on the [formula] surface. Temko, Y.; Suzuki, T.; Xu, M. C.; Jacobi, K. // Applied Physics Letters;11/3/2003, Vol. 83 Issue 18, p3680 

    We report on InAs quantum dots grown by molecular-beam epitaxy on the stable GaAs(&5sline;&2sline;&11sline;)B surface discovered recently. Atomically resolved scanning tunneling microscopy images acquired in situ reveal compact quantum dots terminated by...

  • Characteristics of a high speed 1.22 μm tunnel injection p-doped quantum dot excited state laser. Lee, Chi-Sen; Bhattacharya, Pallab; Frost, Thomas; Guo, Wei // Applied Physics Letters;1/3/2011, Vol. 98 Issue 1, p011103 

    The measured characteristics of excited state lasing in tunnel injection p-doped InAs quantum dot lasers are reported. Excited state lasing at 1.22 μm is ensured by a high-reflectivity facet coating which is designed to suppress ground state lasing in the devices. The saturation modal gain in...

  • Highly unidirectional Y-junction-coupled S-section quantum-dot ring lasers. Withers, Nathan J.; Cao, Hongjun; Smolyakov, Gennady A.; Osinski, Marek // Applied Physics Letters;12/5/2011, Vol. 99 Issue 23, p231103 

    Fabrication and characterization of Y-junction-coupled S-section InAs/InGaAs/GaAs quantum-dot ring lasers with high unidirectionality is reported. Stable unidirectional operation of the ring lasers is ensured by a new design that suppresses the unwanted counterpropagating modes more effectively...

  • Gain and tuning characteristics of mid-infrared InSb quantum dot diode lasers. Lu, Q.; Zhuang, Q.; Hayton, J.; Yin, M.; Krier, A. // Applied Physics Letters;7/21/2014, Vol. 105 Issue 3, p1 

    There have been relatively few reports of lasing from InSb quantum dots (QDs). In this work, type II InSb/InAs QD laser diodes emitting in the mid-infrared at 3.1 lm have been demonstrated and characterized. The gain was determined to be 2.9 cm-1 per QD layer, and the waveguide loss was ~15 cm-1...

  • Vertical integration of ultrafast semiconductor lasers. Maas, D. J. H. C.; Bellancourt, A.-R.; Rudin, B.; Golling, M.; Unold, H. J.; Südmeyer, T.; Keller, U. // Applied Physics B: Lasers & Optics;Sep2007, Vol. 88 Issue 4, p493 

    Lasers generating short pulses – referred to as ultrafast lasers – enable many applications in science and technology. Numerous laboratory experiments have confirmed that ultrafast lasers can significantly increase telecommunication data rates [1], improve computer interconnects,...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics