TITLE

Improved performance of 1.3 μm multilayer InAs quantum-dot lasers using a high-growth-temperature GaAs spacer layer

AUTHOR(S)
Liu, H. Y.; Sellers, I. R.; Badcock, T. J.; Mowbray, D. J.; Skolnick, M. S.; Groom, K. M.; Gutiérrez, M.; Hopkinson, M.; Ng, J. S.; David, J. P. R.; Beanland, R.
PUB. DATE
August 2004
SOURCE
Applied Physics Letters;8/2/2004, Vol. 85 Issue 5, p704
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The use of a high-growth-temperature GaAs spacer layer is demonstrated to significantly improve the performance of 1.3 μm multilayer self-assembled InAs/InGaAs dot-in-a-well lasers. The high-growth-temperature spacer layer inhibits threading dislocation formation, resulting in enhanced electrical and optical characteristics. Incorporation of these spacer layers allows the fabrication of multilayer quantum-dot devices emitting above 1.3 μm, with extremely low room-temperature threshold current densities and with operation up to 105°C.
ACCESSION #
13926123

 

Related Articles

  • Continuous-wave Lasing of Single-Mode Metamorphic Quantum Dot Lasers for the 1.5-μm Spectral Region. Karachinsky, L. Ya.; Kettler, T.; Gordeev, N. Yu.; Novikov, I. I.; Maximov, M. V.; Shernyakov, Yu. M.; Kryzhanovskaya, N. V.; Zhukov, A. E.; Semenova, E. S.; Vasil'ev, A. P.; Ustinov, V. M.; Ledentsov, N. N.; Kovsh, A. R.; Shchukin, V. A.; Mikhrin, S. S.; Lochmann, A.; Schulz, O.; Reissmann, L.; Bimberg, D. // Semiconductors;Dec2005, Vol. 39 Issue 12, p1415 

    Lasers based on InAs/InGaAs quantum dots grown on metamorphic (In,Ga,Al)As layers deposited by MBE on GaAs substrates exhibited emission near 1.5 μm with a differential quantum efficiency of about 50%. The narrow-stripe lasers operate in a single transverse mode and withstand continuous...

  • Lasing spectra of 1.55 μm InAs/InP quantum dot lasers: theoretical analysis and comparison with the experiments. Veselinov, K.; Grillot, F.; Gioannini, M.; Montrosset, I.; Homeyer, E.; Piron, R.; Even, J.; Bekiarski, A.; Loualiche, S. // Optical & Quantum Electronics;Feb2008, Vol. 40 Issue 2-4, p227 

    In this paper, a theoretical model is used to investigate the lasing spectrum properties of InAs/InP (113)B quantum dot (QD) lasers emitting at 1.55 μm. The numerical model used is based on a multi-population rate equation (MPRE) analysis. It takes into account the effect of the competition...

  • Temperature-dependent photoluminescence study of 1.3 μm undoped InAs/InGaAs/GaAs quantum dots. Ngo, C. Y.; Yoon, S. F.; Lim, D. R.; Wong, Vincent; Chua, S. J. // Applied Physics Letters;7/28/2008, Vol. 93 Issue 4, p041912 

    InAs/InGaAs/GaAs quantum dot (QD) structures are commonly employed for 1.3 μm emission. However, reduction in the thermal stability of the undoped InAs/InGaAs/GaAs QD lasers has been observed upon inclusion of the InxGa1-xAs strain-reducing layer. In this work, the effect of QD growth...

  • Continuous-wave operation of 1.5 μm InGaAs/InGaAsP/InP quantum dot lasers at room temperature. Kim, H. D.; Jeong, W. G.; Lee, J. H.; Yim, J. S.; Lee, D.; Stevenson, R.; Dapkus, P. D.; Jang, J. W.; Pyun, S. H. // Applied Physics Letters;8/22/2005, Vol. 87 Issue 8, p083110 

    Continuous-wave operation at room temperature from InGaAs/InGaAsP/InP quantum dot (QD) laser diodes (LD) has been achieved. A ridge waveguide QD LD with 7 QD-stacks in the active region lases at 1.503 μm at 20 °C and that with 5 QD-stacks lases at 1.445 μm at room temperature. The shift...

  • InAs quantum dots on the [formula] surface. Temko, Y.; Suzuki, T.; Xu, M. C.; Jacobi, K. // Applied Physics Letters;11/3/2003, Vol. 83 Issue 18, p3680 

    We report on InAs quantum dots grown by molecular-beam epitaxy on the stable GaAs(&5sline;&2sline;&11sline;)B surface discovered recently. Atomically resolved scanning tunneling microscopy images acquired in situ reveal compact quantum dots terminated by...

  • Gain and tuning characteristics of mid-infrared InSb quantum dot diode lasers. Lu, Q.; Zhuang, Q.; Hayton, J.; Yin, M.; Krier, A. // Applied Physics Letters;7/21/2014, Vol. 105 Issue 3, p1 

    There have been relatively few reports of lasing from InSb quantum dots (QDs). In this work, type II InSb/InAs QD laser diodes emitting in the mid-infrared at 3.1 lm have been demonstrated and characterized. The gain was determined to be 2.9 cm-1 per QD layer, and the waveguide loss was ~15 cm-1...

  • Characteristics of a high speed 1.22 μm tunnel injection p-doped quantum dot excited state laser. Lee, Chi-Sen; Bhattacharya, Pallab; Frost, Thomas; Guo, Wei // Applied Physics Letters;1/3/2011, Vol. 98 Issue 1, p011103 

    The measured characteristics of excited state lasing in tunnel injection p-doped InAs quantum dot lasers are reported. Excited state lasing at 1.22 μm is ensured by a high-reflectivity facet coating which is designed to suppress ground state lasing in the devices. The saturation modal gain in...

  • Highly unidirectional Y-junction-coupled S-section quantum-dot ring lasers. Withers, Nathan J.; Cao, Hongjun; Smolyakov, Gennady A.; Osinski, Marek // Applied Physics Letters;12/5/2011, Vol. 99 Issue 23, p231103 

    Fabrication and characterization of Y-junction-coupled S-section InAs/InGaAs/GaAs quantum-dot ring lasers with high unidirectionality is reported. Stable unidirectional operation of the ring lasers is ensured by a new design that suppresses the unwanted counterpropagating modes more effectively...

  • Vertical integration of ultrafast semiconductor lasers. Maas, D. J. H. C.; Bellancourt, A.-R.; Rudin, B.; Golling, M.; Unold, H. J.; Südmeyer, T.; Keller, U. // Applied Physics B: Lasers & Optics;Sep2007, Vol. 88 Issue 4, p493 

    Lasers generating short pulses – referred to as ultrafast lasers – enable many applications in science and technology. Numerous laboratory experiments have confirmed that ultrafast lasers can significantly increase telecommunication data rates [1], improve computer interconnects,...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics