TITLE

Effective optical manipulation of the charge state and emission intensity of the InAs/GaAs quantum dots by means of additional infrared illumination

AUTHOR(S)
Moskalenko, E. S.; Karlsson, K. F.; Donchev, V.; Holtz, P. O.; Monemar, B.; Schoenfeld, W. V.; Petroff, P. M.
PUB. DATE
August 2004
SOURCE
Applied Physics Letters;8/2/2004, Vol. 85 Issue 5, p754
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
InAs quantum dots (QDs) at different levels of density have been studied by means of photoluminescence, when in addition to the main laser, a second infrared (IR) laser is employed to excite the QD. It is demonstrated that the IR laser considerably affects the QD charge state as well as the emission intensity level (an increase greater than fivefold was observed). These effects are explained in terms of separate generation of excess electrons and holes provided under dual-laser excitation. However, these effects progressively vanish with increasing QD density. The results obtained unambiguously imply that the emission intensity from the QD can be effectively enhanced by purely optical means.
ACCESSION #
13926106

 

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