Low-frequency noise in AlSb/InAs high-electron-mobility transistor structure as a function of temperature and illumination

Kruppa, W.; Yang, M. J.; Bennett, B. R.; Boos, J. B.
August 2004
Applied Physics Letters;8/2/2004, Vol. 85 Issue 5, p774
Academic Journal
Measurements of the low-frequency noise in AlSb/InAs high-electron-mobility transistor structures over the temperature range between 60 and 300 K are reported. Without illumination, the slope of the noise level with frequency was found to be close to 1/f with a Hooge parameter, αH, of 9×10-3 at room temperature. With broad-spectrum visible-light illumination at lower temperatures, however, the noise level increases greatly and displays a strong Lorentzian component with the characteristic 1/f2 slope above the corner frequency. The associated sheet resistance also increases greatly, consistent with previously observed negative photoconductivity in AlSb/InAs quantum wells.


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