AlGaN-based 280 nm light-emitting diodes with continuous wave powers in excess of 1.5 mW

Sun, W. H.; Zhang, J. P.; Adivarahan, V.; Chitnis, A.; Shatalov, M.; Wu, S.; Mandavilli, V.; Yang, J. W.; Khan, M. A.
July 2004
Applied Physics Letters;7/26/2004, Vol. 85 Issue 4, p531
Academic Journal
We report on AlGaN-based light-emitting diodes over sapphire with peak emission at 280 nm. A modified active layer structure consisting of four multiple quantum wells, addition of an electron blocking magnesium doped p-AlGaN layer, improved contacts along with flip-chip packaging resulted in a cw power of 0.7 mW at 230 mA for a single 200 μm×200 μm device. Flip-chipping four 100 μm×100 μm devices in a parallel configuration improved the dc saturation current and enabled us to obtain a cw power of 1.53 mW (at 450 mA) and a pulse power as high as 24 mW (at 1.5 A). These powers translate to values of 0.36% and 0.12% for the external quantum efficiency and the wall plug efficiency.


Related Articles

  • AlGaN single-quantum-well light-emitting diodes with emission at 285 nm. Adivarahan, V.; Wu, S.; Chitnis, A.; Pachipulusu, R.; Mandavilli, V.; Shatalov, M.; Zhang, J. P.; Khan, M. Asif; Tamulaitis, G.; Sereika, A; Yilmaz, I.; Shur, M. S.; Gaska, R. // Applied Physics Letters;11/4/2002, Vol. 81 Issue 19, p3666 

    We report on AlGaN single-quantum-well light-emitting diodes (LEDs) on sapphire with peak emission at 285 nm. A study is presented to identify the key material parameters controlling the device quantum efficiency. At room temperature, for a 200 μm×200 μm square geometry mesa type...

  • Modulating emission intensity of GaN-based green light emitting diodes on c-plane sapphire. Chunhua Du; Ziguang Ma; Junming Zhou; Taiping Lu; Yang Jiang; Haiqiang Jia; Wuming Liu; Hong Chen // Applied Physics Letters;4/14/2014, Vol. 104 Issue 15, p151102-1 

    The asymmetric dual-wavelength (green/blue) coupled InGaN/GaN multiple quantum wells were proposed to modulate the green emission intensity. Electroluminescent measurements demonstrate the conspicuous increment of the green light intensity by decreasing the coupled barrier thickness. This was...

  • 1 mW AlInGaN-based ultraviolet light-emitting diode with an emission wavelength of 348 nm grown on sapphire substrate. Wang, T.; Liu, Y. H.; Lee, Y. B.; Ao, J. P.; Bai, J.; Sakai, S. // Applied Physics Letters;9/30/2002, Vol. 81 Issue 14, p2508 

    By introducing the AlInGaN/AlGaN quaternary system as an active region, we fabricated an UV light-emitting diode (LED) with an emission wavelength of 348 nm. The optical power is 1 mW at an injection current of 50 mA under a bare-chip geometry, which is the highest report among UV-LEDs with an...

  • Milliwatt power deep ultraviolet light-emitting diodes over sapphire with emission at 278 nm. Zhang, J. P.; Chitnis, A.; Adivarahan, V.; Wu, S.; Mandavilli, V.; Pachipulusu, R.; Shatalov, M.; Simin, G.; Yang, J. W.; Khan, M. Asif // Applied Physics Letters;12/23/2002, Vol. 81 Issue 26, p4910 

    We report on A1GaN multiple-quantum-well (MQW)-based deep ultraviolet light-emitting diodes over sapphire with peak emission at 278 nm. A new buffer layer growth process was used to reduce the number of defects and hence the nonradiative recombination. The improved material quality and carrier...

  • Room temperature blue light emitting p-n diodes from Zn(S,Se)-based multiple quantum well.... Xie, W.; Grillo, D.C. // Applied Physics Letters;4/20/1992, Vol. 60 Issue 16, p1999 

    Describes the blue light emitting quantum well diodes based on Zn(S,Se) p-n junctions at room temperature. Use of nitrogen radio frequency plasma cell; Formation of the light emitting diode; Provision of a lattice match between the II-VI active region and gallium arsenide buffer; Emission...

  • InAsSb/InAlAsSb strained quantum-well diode lasers emitting at 3.9 mum. Choi, H.K.; Turner, G.W. // Applied Physics Letters;7/17/1995, Vol. 67 Issue 3, p332 

    Presents a fabrication of strained quantum-well diode lasers emitting at 3.9 micrometer. Components of the double-heterostructure (DH) diode lasers; Ways to calculate the effect of strain on the band offset; Details of the double-crystal x-ray diffraction measurement.

  • Room-temperature continuous-wave operation of InGaN multi-quantum-well-structure laser diodes.... Nakamura, Shuji; Senoh, Masayuki // Applied Physics Letters;2/17/1997, Vol. 70 Issue 7, p868 

    Examines a room-temperature continuous-wave operation of indium-gallium-nitride (InGaN) multi-quantum-well-structure laser diodes (LD) with a lifetime of 24-40 minutes. Details on the threshold current and voltage of the LD; List of short-wavelength-emitting devices; Structure of the...

  • Short-coherence photorefractive holography in multiple-quantum-well devices using light-emitting... Tziraki, M.; Jones, R.; French, P.M.W.; Nolte, D.D.; Melloch, M.R. // Applied Physics Letters;9/6/1999, Vol. 75 Issue 10, p1363 

    Demonstrates an application of light-emitting diodes to photorefractive holography with multiple-quantum-well devices. Holograms corresponding to three-dimensional images recorded.

  • InAs(PSb)-based "W" quantum well laser diodes emitting near 3.3 μm. Joullié, A.; Skouri, E. M.; Garcia, M.; Grech, P.; Wilk, A.; Christol, P.; Baranov, A. N.; Behres, A.; Kluth, J.; Stein, A.; Heime, K.; Heuken, M.; Hueken, M.; Rushworth, S.; Hulicius, E.; Simecek, T. // Applied Physics Letters;5/1/2000, Vol. 76 Issue 18 

    Mid-infrared laser diodes with an active region consisting of five "W" InAsSb/InAsP/InAsSb/InAsPSb quantum wells and broad InAsPSb waveguide were fabricated by metalorganic vapor phase epitaxy on InAs substrates. Laser emission was demonstrated at 3.3 μm up to 135 K from asymmetrical...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics