TITLE

AlGaN-based 280 nm light-emitting diodes with continuous wave powers in excess of 1.5 mW

AUTHOR(S)
Sun, W. H.; Zhang, J. P.; Adivarahan, V.; Chitnis, A.; Shatalov, M.; Wu, S.; Mandavilli, V.; Yang, J. W.; Khan, M. A.
PUB. DATE
July 2004
SOURCE
Applied Physics Letters;7/26/2004, Vol. 85 Issue 4, p531
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report on AlGaN-based light-emitting diodes over sapphire with peak emission at 280 nm. A modified active layer structure consisting of four multiple quantum wells, addition of an electron blocking magnesium doped p-AlGaN layer, improved contacts along with flip-chip packaging resulted in a cw power of 0.7 mW at 230 mA for a single 200 μm×200 μm device. Flip-chipping four 100 μm×100 μm devices in a parallel configuration improved the dc saturation current and enabled us to obtain a cw power of 1.53 mW (at 450 mA) and a pulse power as high as 24 mW (at 1.5 A). These powers translate to values of 0.36% and 0.12% for the external quantum efficiency and the wall plug efficiency.
ACCESSION #
13885883

 

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