TITLE

Ultrahigh-speed etching of SiO2 with ultrahigh selectivity over Si in microwave-excited non equilibrium atmospheric pressure plasma

AUTHOR(S)
Yamakawa, Koji; Hori, Masaru; Goto, Toshio; Den, Shoji; Katagiri, Toshirou; Kano, Hiroyuki
PUB. DATE
July 2004
SOURCE
Applied Physics Letters;7/26/2004, Vol. 85 Issue 4, p549
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Etching of a SiO2 film [Boro-phospho silicate glass (BPSG)] has been performed in a continuous-wave microwave-excited nonequilibrium atmospheric pressure plasma using a microgap discharge. A NF3/He gas mixture with added H2O was employed as the feed gas. An ultrahigh etch rate for SiO2 (BPSG) of 14 μm/min and an ultrahigh selectivity over Si(SiO2/Si) of 200 was obtained. A mechanism for the selective etching is proposed based on results obtained using Fourier transform infrared spectroscopy and spatially imaged optical emission spectroscopy with an intensified charge-coupled device camera. This process could offer a breakthrough for ultrahigh-speed, damage-free micromachining of SiO2 in microelectromechanical system devices.
ACCESSION #
13885877

 

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