Ultrahigh-speed etching of SiO2 with ultrahigh selectivity over Si in microwave-excited non equilibrium atmospheric pressure plasma

Yamakawa, Koji; Hori, Masaru; Goto, Toshio; Den, Shoji; Katagiri, Toshirou; Kano, Hiroyuki
July 2004
Applied Physics Letters;7/26/2004, Vol. 85 Issue 4, p549
Academic Journal
Etching of a SiO2 film [Boro-phospho silicate glass (BPSG)] has been performed in a continuous-wave microwave-excited nonequilibrium atmospheric pressure plasma using a microgap discharge. A NF3/He gas mixture with added H2O was employed as the feed gas. An ultrahigh etch rate for SiO2 (BPSG) of 14 μm/min and an ultrahigh selectivity over Si(SiO2/Si) of 200 was obtained. A mechanism for the selective etching is proposed based on results obtained using Fourier transform infrared spectroscopy and spatially imaged optical emission spectroscopy with an intensified charge-coupled device camera. This process could offer a breakthrough for ultrahigh-speed, damage-free micromachining of SiO2 in microelectromechanical system devices.


Related Articles

  • Anisotropic plasma-chemical etching by an electron-beam-generated plasma. Verhey, T. R.; Rocca, J. J.; Boyer, P. K. // Journal of Applied Physics;4/1/1988, Vol. 63 Issue 7, p2463 

    Presents a study which demonstrated the anisotropic etching of silicon dioxide achieved with the assistance of an electron-beam-generated plasma. Information on the etch rate dependencies of silicon dioxide and silicon as a function of electron beam current density and energy; Mechanisms which...

  • Radiation temperature of nonequilibrium plasmas. Arunasalam, V. // Physics of Fluids B: Plasma Physics;Jun92, Vol. 4 Issue 6, p1643 

    In fusion devices measurements of the radiation temperature Tr(ω,k) near the electron cyclotron frequency ωc and the second harmonic 2ωc in directions nearly perpendicular to the confining magnetic field B (i.e., k≊k⊥ ) serve to map out the electron temperature profiles...

  • Angular dependence of silicon oxide etching yield in fluorocarbon chemistries. Ohseung Kwon; Weidong Jin; Sawin, Herbert H. // Applied Physics Letters;3/27/2006, Vol. 88 Issue 13, p133117 

    High density fluorocarbon plasma for silicon oxide etching has various ion and neutral species. Profile evolution modeling can provide understanding of many difficulties caused by the complexity of the plasma in etching. In this research we have measured etching and deposition rates as functions...

  • DERÄ°N REAKTÄ°F Ä°YON AÅžINDIRMA DEĞİŞKENLERÄ°NÄ°N SÄ°LÄ°SYUM VE SU8'Ä°N AÅžINDIRMA HIZLARI ÃœZERÄ°NDEKÄ° ETKÄ°LERÄ°. Abdullahoğlu, Ragip; Karakaya, Mahmut Can; Kizil, Huseyin; Tuncer, Onur; Trabzon, Levent // Engineer & the Machinery Magazine;Nov2011, Issue 622, p40 

    It is mentioned about the parametric experiments for deep reactive ion etching (DRIE) method for n type, <100> oriented, 100mm (milimeter) Silicon as a subtrate and SU8-3050 negative photo resist as a mask material in this study. DRIE process is performed in plasma that is produced by two RF...

  • Gold etching for microfabrication. Green, T. // Gold Bulletin;Sep2014, Vol. 47 Issue 3, p205 

    The etching of gold is a key enabling technology in the fabrication of many microdevices and is widely used in the electronic, optoelectronic and microelectromechanical systems (MEMS) industries. In this review, we examine some of the available methods for patterning gold thin films using dry...

  • Influence of temperature on defect creation during plasma exposure of SiO2 films. Devine, R. A. B. // Applied Physics Letters;12/10/1990, Vol. 57 Issue 24, p2564 

    Chemical vapor deposited silicon dioxide films have been exposed to ultraviolet radiation from a microwave excited Kr/F plasma. Sample temperatures during exposure were in the range 82–300 K. The creation of oxygen-vacancy like defects was measured as a function of exposure time and...

  • Lower plasma-induced damage in SiO2/Si at lower temperatures. Mizutani, Tatsumi; Yunogami, Takashi; Tsujimoto, Kazunori // Applied Physics Letters;10/15/1990, Vol. 57 Issue 16, p1654 

    We found that the radiation damage induced in a SiO2/Si system during plasma processing depends strongly on the specimen temperature. The surfaces of the SiO2 have been exposed to a microwave plasma at different temperatures and the resultant damage has been evaluated by capacitance-voltage...

  • Effects of substrate temperature and ion incident energy on silicon surface cleaning using a hydrogen plasma excited by electron cyclotron resonance. Nakashima, Kenji; Ishii, Masahiko; Hayakawa, Tetsuo; Tajima, Ichiro; Yamamoto, Minoru // Journal of Applied Physics;12/1/1993, Vol. 74 Issue 11, p6936 

    Presents a study that investigated the effects of the substrate temperature and ion incident energy on silicon surface cleaning using a hydrogen plasma excited by electron cyclotron resonance. Effect of ion incident energy on the removal of the oxide from the silicon surface; Effect of the...

  • Enhancement of deposition rates in the reactive sputtering of silicon exposed to an argon-oxygen.... Ohwaki, Takeshi; Taga, Yasunori // Applied Physics Letters;7/22/1991, Vol. 59 Issue 4, p420 

    Investigates the deposition enhancement rates in the reactive sputtering of silicon oxide thin films exposed to an argon-oxygen plasma. Measurement of deposition rates in sputtering gas and power; Enhancement of deposition rate by critical oxygen mole fraction in argon-oxygen plasma; Modes in...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics