TITLE

Enhanced photoluminescence of InAs self-assembled quantum dots grown by molecular-beam epitaxy using a “nucleation-augmented” method

AUTHOR(S)
Chia, C. K.; Chua, S. J.; Miao, Z. L.; Chye, Y. H.
PUB. DATE
July 2004
SOURCE
Applied Physics Letters;7/26/2004, Vol. 85 Issue 4, p567
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A two-stage “nucleation-augmented” growth method for producing InAs self-assembled quantum dots (QDs) using molecular-beam epitaxy on GaAs (100) substrates has been investigated in detail. Photoluminescence (PL) measurements show that a 1.8-monolayer-(MLs) InAs QD “nucleation” layer grown at a fast rate, followed by a 2.6-MLs-InAs “augmented” layer grown under pulsed conditions at a slow rate, dramatically increases the dot density and improves the PL intensity for the InAs QDs. It was found that, when the effective growth rate of the InAs augmented layer was reduced, the PL peak emission shifts to a longer wavelength and the PL intensity is enhanced. These changes in characteristics were attributed to improved optical quality and greater dot density.
ACCESSION #
13885871

 

Related Articles

  • Photoluminescence Spectroscopy of CdTe/ZnTe Self-Assembled Quantum Dots. Romčević, Nebojša; Romčević, Maja; Kostić, Radmila; Stojanović, Dusanka; Milutinović, Aleksandra; Trajić, Jelena; Karczewski, Grzegorz; Galazka, Robert // International Journal of Photoenergy;Jan2009, Special section p1 

    We present photoluminescence (PL) measurements of two different, 3 monolayers and 12 monolayers (ml), CdTe self-assembled quantum dot (SAQD) samples. The spectra were recorded in the temperature range 20 K-300 K, with photoexcitation over the ZnTe barrier layer. PL spectra displayed two main...

  • Enhancement of the activation energy due to coupling effects in CdxZn1-xTe/ZnTe double quantum dots. Kim, T. W.; Lee, H. S.; Park, H. L. // Journal of Applied Physics;12/1/2006, Vol. 100 Issue 11, p113505 

    Temperature-dependent photoluminescence measurements show that the activation energy of Cd0.6Zn0.4Te/ZnTe double quantum dots (QDs) increases with decreasing ZnTe separation layer. At a separation-layer thickness of 6 nm, this behavior can be attributed to enhancement in the tunneling...

  • Heterogeneous nucleation of coherently strained islands during epitaxial growth of Ge on Si(110). Krishnamurthy, M.; Bi-Ke Yang // Applied Physics Letters;1/6/1997, Vol. 70 Issue 1, p49 

    Investigates the molecular beam epitaxial growth of germanium on silicon(110) surfaces. Formation of shallow faceted pits on the silicon(110; Observation of strained islands in close proximity to each other; Presentation of heterogeneous nucleation as a possible method for fabricating...

  • Photoluminescence of InAs quantum dots grown on disoriented GaAs substrates. Astakhov, G. V.; Kochereshko, V. P.; Vasil’ev, D. G.; Evtikhiev, V. P.; Tokranov, V. E.; Kudryashov, I. V.; Mikhaılov, G. V. // Semiconductors;Sep99, Vol. 33 Issue 9, p988 

    The photoluminescence spectra in an external magnetic field of an ensemble of InAs quantum dots grown by molecular beam epitaxy on a (001) GaAs substrate with a disorientation in the [010] direction are studied. A redistribution of the photoexcited carriers among different groups of dots under...

  • Novel fabrication technique towards quantum dots. Der-Cherng Liu; Chien-Ping Lee // Applied Physics Letters;12/20/1993, Vol. 63 Issue 25, p3503 

    Demonstrates an in situ process for fabricating quantum dots using a single molecular beam epitaxy (MBE). Characterization of optical properties by photoluminescence; Nonexposure of the quantum dots to air; Usefulness of MBE for many optoelectronic device applications.

  • Photoluminescence and time-resolved photoluminescence characteristics of.... Kamath, K.; Chervela, N. // Applied Physics Letters;8/18/1997, Vol. 71 Issue 7, p927 

    Examines the characteristics of luminescent transition in In[sub x]Ga[sub 1-x]As/gallium arsenide self-organized single- and multiple-layer quantum dot laser structure. Growth of quantum dots by molecular beam epitaxy; Correlation between threshold excitation density and number of dot layers;...

  • Photoluminescence study of InAs quantum dots embedded in GaNAs strain compensating layer grown by metalorganic-molecular-beam epitaxy. Zhang, X. Q.; Ganapathy, Sasikala; Kumano, Hidekazu; Uesugi, Kasturi; Suemune, Ikuo // Journal of Applied Physics;12/1/2002, Vol. 92 Issue 11, p6813 

    Self-assembled InAs quantum dots (QDs) embedded in GaN[sub 0.007]AS[sub 0.993] strain compensating layers have been grown by metalorganic-molecular-beam epitaxy on a GaAs (001) substrate with a high density of 1 × 10[sup 11] cm[sup -2]. The photoluminescence properties have been studied for...

  • Influence of Growth Conditions in the Case of Molecular-Beam Epitaxy on Photoluminescence Spectra of GaAs/InAs/GaAs Heterostructures with Quantum Dots near Their Initiation Threshold. Mokerov, V. G.; Fedorov, Yu. V.; Guk, A. V.; Khabarov, Yu. V.; Pak, Kh. S.; Danilochkin, A. V. // Doklady Physics;Oct2000, Vol. 45 Issue 10, p512 

    Reports on the influence of growth conditions in the case of molecular-beam epitaxy on photoluminescence spectra of heterostructures with quantum dots near their initiation threshold. Molecular beam epitaxy on semi-insulating substrates; Propose interpretation of the photoluminescence spectra;...

  • Formation of lateral quantum dot molecules around self-assembled nanoholes. Songmuang, Rudeesun; Kiravittaya, Suwit; Schmidt, Oliver G. // Applied Physics Letters;4/28/2003, Vol. 82 Issue 17, p2892 

    We fabricate groups of closely spaced self-assembled InAs quantum dots (QDs) -- termed lateral QD molecules-on GaAs (001) by a combination of molecular-beam epitaxy and AsBr[SUB3] in situ etching. An initial array of homogeneously sized nanoholes is created by locally strain-enhanced etching of...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics