Effect of Cu deficiency on the optical properties and electronic structure of CuInSe2 and CuIn0.8Ga0.2Se2 determined by spectroscopic ellipsometry

Sung-Ho Han; Hermann, Allen M.; Hasoon, F. S.; Al-Thani, H. A.; Levi, D. H.
July 2004
Applied Physics Letters;7/26/2004, Vol. 85 Issue 4, p576
Academic Journal
Spectroscopic ellipsometry measurements of CuInSe2 (CIS) and CuIn0.8Ga0.2Se2 (CIGS) reveal that there are important differences in electronic properties between stoichiometric CIS (CIGS) and Cu-poor CIS (CIGS). We find a reduction in the absorption strength in the spectral region of 1–3 eV. This reduction can be explained in terms of the Cu 3d density of states. Cu-poor CIS (CIGS) materials show an increase in band gap due to the reduction in repulsion between Cu 3d and Se 4p states. The experimental results have important implications for the function of polycrystalline optoelectronic devices.


Related Articles

  • Strain and localization effects in InGaAs(N) quantum wells:Tuning the magnetic response. Lopes-Oliveira, V.; Herval, L. K. S.; Gordo, V. Orsi; Cesar, D. F.; de Godoy, M. P. F.; Gobato, Y. Galvão; Henini, M.; Khatab, A.; Sadeghi, M.; Wang, S.; Schmidbauer, M. // Journal of Applied Physics;2014, Vol. 116 Issue 23, p233703-1 

    We investigated effects of localization and strain on the optical and magneto-optical properties of diluted nitrogen III-V quantum wells theoretically and experimentally. High-resolution x-ray diffraction, photoluminescence (PL), and magneto-PL measurements under high magnetic fields up to 15 T...

  • Copper-doping effects in electronic structure and spectral properties of SmNi5. Knyazev, Yu. V.; Lukoyanov, A. V.; Kuz'min, Yu. I.; Kuchin, A. G. // Low Temperature Physics;Dec2015, Vol. 41 Issue 12, p1024 

    The electronic structure and optical properties of the SmNi5-xCux (x = 0, 1, 2) compounds are studied. The band spectra of the studied intermetallics were calculated with LDA + U + SO method supplementing the local density approximation with a correction for strong electron interaction on the...

  • The structural, electronic, and optical properties of ladder-type polyheterofluorenes: a theoretical study. Zheng, Chao; Tao, Ye; Cao, Jin-Zhu; Chen, Run-Feng; Zhao, Ping; Wu, Xiao-Jun; Huang, Wei // Journal of Molecular Modeling;Nov2012, Vol. 18 Issue 11, p4929 

    The ladder-type polyheterofluorenes were investigated theoretically by using density functional theory (DFT) to reveal their optical and electronic properties for applications in organic optoelectronic devices. The incorporation of heteroatoms (B, Si, Ge, N, P, O, and S) into the ladder-type...

  • Quantum Dots as Sources and Detectors of Mid- and Far-Infrared Radiation: Theoretical Models. Vukmirović, N.; Indjin, D.; Ikonić, Z.; Harrison, P. // Acta Physica Polonica, A.;Oct2009, Vol. 116 Issue 4, p464 

    We present a review of theoretical methods used to study the electronic structure, optical and transport properties of intraband optoelectronic devices based on self-assembled quantum dots.

  • Functionalized silicon quantum dots by N-vinylcarbazole: synthesis and spectroscopic properties. Ji, Jianwei; Wang, Guan; You, Xiaozeng; Xu, Xiangxing // Nanoscale Research Letters;Dec2014, Vol. 9 Issue 1, p1 

    Silicon quantum dots (Si QDs) attract increasing interest nowadays due to their excellent optical and electronic properties. However, only a few optoelectronic organic molecules were reported as ligands of colloidal Si QDs. In this report, N-vinylcarbazole - a material widely used in the...

  • Optical Properties Analysis of Ta-doped TiO2 Thin Films on LaAlO3 Substrates. Eka Nurfani; Sutjahja, Inge M.; Andrivo Rusydi; Yudi Darma // AIP Conference Proceedings;2015, Vol. 1677 Issue 1, p070008-1 

    We study optical properties of Ta-doped TiO2 thin film on LaAlO3 substrate using spectroscopy ellipsometry (SE) analysis at energy range of 0.5 - 6.5 eV. Room temperature SE data for Ψ (amplitude ratio) and Δ (phase difference) between p- and s- polarized light waves are taken with...

  • Modeling the optical properties of hexagonal GaN. Djurisˇic´, Aleksandra B.; Li, E. Herbert // Applied Physics Letters;8/17/1998, Vol. 73 Issue 7 

    An adjustable broadening function instead of the conventional Lorentzian one is incorporated in the dielectric function model for hexagonal GaN. One-electron contributions at E[sub 1] critical points and higher-state (m>1) exciton terms, which were incorrectly disregarded in the previous study,...

  • Optical properties of Cu nanocomposite glass obtained via CuO and SnO co-doping. Jiménez, J. // Applied Physics A: Materials Science & Processing;Mar2014, Vol. 114 Issue 4, p1369 

    Prospective applications of plasmonic nanocomposites in photonic and optoelectronic devices demand innovative means of material syntheses, as well as a comprehensive understanding of the influence of material composition and processing on resulting properties. In this work, it is shown that a...

  • Effect of Vacuum Annealing on the Optoelectric and Morphological Properties of F16CuPc Thin Films. Koshy, Raji; Menon, C. S. // E-Journal of Chemistry;2012, Vol. 9 Issue 1, p294 

    The effect of vacuum annealing temperature on optical and electrical properties of vacuum evaporated F16CuPc thin films have been studied spectrophotometer and Kiethely electrometer respectively. The band gap energy both fundamental and excitonic remains unchanged when the annealing temperature...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics