TITLE

Plasma wave detection of sub-terahertz and terahertz radiation by silicon field-effect transistors

AUTHOR(S)
Knap, W.; Teppe, F.; Meziani, Y.; Dyakonova, N.; Lusakowski, J.; Boeuf, F.; Skotnicki, T.; Maude, D.; Rumyantsev, S.; Shur, M. S.
PUB. DATE
July 2004
SOURCE
Applied Physics Letters;7/26/2004, Vol. 85 Issue 4, p675
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report on experiments on photoresponse to sub-THz (120 GHz) radiation of Si field-effect transistors (FETs) with nanometer and submicron gate lengths at 300 K. The observed photoresponse is in agreement with predictions of the Dyakonov–Shur plasma wave detection theory. This is experimental evidence of the plasma wave detection by silicon FETs. The plasma wave parameters deduced from the experiments allow us to predict the nonresonant and resonant detection in THz range by nanometer size silicon devices—operating at room temperature.
ACCESSION #
13885835

 

Related Articles

  • Terahertz detection by epitaxial-graphene field-effect-transistors on silicon carbide. Bianco, F.; Perenzoni, D.; Convertino, D.; De Bonis, S. L.; Spirito, D.; Perenzoni, M.; Coletti, C.; Vitiello, M. S.; Tredicucci, A. // Applied Physics Letters;9/28/2015, Vol. 107 Issue 13, p1 

    We report on room temperature detection of terahertz radiation by means of antenna-coupled field effect transistors (FETs) fabricated using epitaxial graphene grown on silicon carbide. The achieved photoresponsivity (~0.25V/W) and noise equivalent power (~80 nW/√Hz) result from the combined...

  • Terahertz Emission and Detection by Plasma Waves in Nanoscale Transistors. Teppe, F.; Łusakowski, J.; Dyakonova, N.; Meziani, Y. M.; Knap, W.; Parenty, T.; Bollaert, S.; Cappy, A.; Popov, V.; Boeuf, F.; Skotnicki, T.; Maude, D.; Rumyantsev, S.; Shur, M. S. // AIP Conference Proceedings;2005, Vol. 772 Issue 1, p1523 

    We report on the detection of the sub-THz and THz radiation by silicon FETs and on the voltage tunable emission of terahertz radiation from InGaAs/AlInAs HEMTs with nanoscale gate lengths. The observed photo-response is in agreement with the predictions of the plasma wave response theory. The...

  • Plasma wave resonant detection of femtosecond pulsed terahertz radiation by a nanometer field-effect transistor. Teppe, F.; Veksler, D.; Kachorovski, V. Yu.; Dmitriev, A. P.; Xie, X.; Zhang, X.-C.; Rumyantsev, S.; Knap, W.; Shur, M. S. // Applied Physics Letters;7/11/2005, Vol. 87 Issue 2, p022102 

    We report on the room-temperature, resonant detection of femtosecond pulsed terahertz radiation obtained by optical rectification in a ZnTe crystal. The detection was realized using a 250 nm gate length GaAs/AlGaAs heterostructure field-effect transistor. We show that physical mechanism of the...

  • Room temperature tunable detection of subterahertz radiation by plasma waves in nanometer InGaAs transistors. Teppe, F.; Orlov, M.; El Fatimy, A.; Tiberj, A.; Knap, W.; Torres, J.; Gavrilenko, V.; Shchepetov, A.; Roelens, Y.; Bollaert, S. // Applied Physics Letters;11/27/2006, Vol. 89 Issue 22, p222109 

    The authors report on the demonstration of room temperature, tunable terahertz detection obtained by 50 nm gate length AlGaAs/InGaAs high electron mobility transistors (HEMTs). They show that the physical mechanism of the detection is related to the plasma waves excited in the transistor channel...

  • Rational design of high-responsivity detectors of terahertz radiation based on distributed self-mixing in silicon field-effect transistors. Lisauskas, Alvydas; Pfeiffer, Ullrich; Öjefors, Erik; Bolìvar, Peter Haring; Glaab, Diana; Roskos, Hartmut G. // Journal of Applied Physics;Jun2009, Vol. 105 Issue 11, p114511-1 

    In search of novel detectors of electromagnetic radiation at terahertz frequencies, field-effect transistors (FETs) have recently gained much attention. The current literature studies them with respect to the excitation of plasma waves in the two-dimensional channel. Circuit aspects have been...

  • Plasma wave detection of terahertz radiation by silicon field effects transistors: Responsivity and noise equivalent power. Tauk, R.; Teppe, F.; Boubanga, S.; Coquillat, D.; Knap, W.; Meziani, Y. M.; Gallon, C.; Boeuf, F.; Skotnicki, T.; Fenouillet-Beranger, C.; Maude, D. K.; Rumyantsev, S.; Shur, M. S. // Applied Physics Letters;12/18/2006, Vol. 89 Issue 25, p253511 

    Si metal oxide semiconductor field effect transistors (MOSFETs) with the gate lengths of 120–300 nm have been studied as room temperature plasma wave detectors of 0.7 THz electromagnetic radiation. In agreement with the plasma wave detection theory, the response was found to depend on the...

  • Silicon-based nanochannel glucose sensor. Wang, Xihua; Chen, Yu; Gibney, Katherine A.; Erramilli, Shyamsunder; Mohanty, Pritiraj // Applied Physics Letters;1/7/2008, Vol. 92 Issue 1, p013903 

    Silicon nanochannel biological field effect transistors have been developed for glucose detection. The device is nanofabricated from a silicon-on-insulator wafer with a top-down approach and surface functionalized with glucose oxidase. The differential conductance of silicon nanowires, tuned...

  • A pH sensor with a double-gate silicon nanowire field-effect transistor. Ahn, Jae-Hyuk; Kim, Jee-Yeon; Seol, Myeong-Lok; Baek, David J.; Guo, Zheng; Kim, Chang-Hoon; Choi, Sung-Jin; Choi, Yang-Kyu // Applied Physics Letters;2/25/2013, Vol. 102 Issue 8, p083701 

    A pH sensor composed of a double-gate silicon nanowire field-effect transistor (DG Si-NW FET) is demonstrated. The proposed DG Si-NW FET allows the independent addressing of the gate voltage and hence improves the sensing capability through an application of asymmetric gate voltage between the...

  • Manipulation of transport hysteresis on graphene field effect transistors with Ga ion irradiation. Quan Wang; Shuai Liu; Naifei Ren // Applied Physics Letters;9/29/2014, Vol. 105 Issue 13, p1 

    We have studied the effect of Ga ion irradiation on the controllable hysteretic behavior of graphene field effect transistors fabricated on Si/SO2 substrates. The various densities of defects in graphene were monitored by Raman spectrum. It was found that the Dirac point shifted to the positive...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics