TITLE

Comment on “Coulomb explosion in femtosecond laser ablation of Si(111)” [ Appl. Phys. Lett. 82, 4190 (2003) ]

AUTHOR(S)
Stoian, R.; Rosenfeld, A.; Hertel, I. V.; Bulgakova, N. M.; Campbell, E. E. B.
PUB. DATE
July 2004
SOURCE
Applied Physics Letters;7/26/2004, Vol. 85 Issue 4, p694
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Presents a commentary on occurrence of an electrostatic form of material removal from solid silicon samples irradiated with high-intensity ultrashort laser pulses. Linear scaling of the velocity of species with different charge states; Calculations regarding the mechanisms for surface electrostatic disruption; Lattice destabilization at high carrier density.
ACCESSION #
13885827

 

Related Articles

  • Epitaxial NiSi layers on <111>-oriented Si obtained by pulsed laser irradiation. Baeri, P.; Grimaldi, M. G.; Priolo, F.; Cullis, A. G.; Chew, N. G. // Journal of Applied Physics;7/15/1989, Vol. 66 Issue 2, p861 

    Reports on the irradiation of thermally grown NiSi layers on silicon substrates by neodymium laser pulses. Experiment; Results; Discussion and conclusion.

  • Drude parameters of liquid silicon at the melting temperature. Li, K. D.; Fauchet, P. M. // Applied Physics Letters;11/23/1987, Vol. 51 Issue 21, p1747 

    The Drude parameters of liquid silicon at the melting temperature have been obtained from time-resolved reflectivity measurements at 1064, 532, and 355 nm following melting of an optically thick layer by a picosecond visible laser pulse. The ratio of the electron density N to the electron mass m...

  • Carrier diffusion in microcrystalline silicon studied by the picosecond laser induced grating technique. Kudrna, J.; Troja´nek, F.; Maly´, P.; Pelant, I. // Applied Physics Letters;7/30/2001, Vol. 79 Issue 5 

    We report on the picosecond laser induced grating technique applied to hydrogenated microcrystalline silicon (μc-Si:H) and aimed at studying the photocarrier diffusion coefficient D. We have studied a series of three samples having a distinctly different content of the crystalline phase, and...

  • Erratum: 'Temperature dependent ablation threshold in silicon using ultrashort laser pulses' [J. Appl. Phys. 112, 103514 (2012)]. Thorstensen, Jostein; Erik Foss, Sean // Journal of Applied Physics;12/15/2012, Vol. 112 Issue 12, p129901 

    A correction to the article "Temperature Dependent Ablation Threshold in Silicon Using Ultrashort Laser Pulses" that was published in the November 2012 issue is presented.

  • Formation of an electron beam with a duration shorter than 100 fs during photoemission of electrons by femtosecond laser pulses. Mironov, B. N.; Assev, S. A.; Minogin, V. G.; Chekalin, S. V. // Journal of Experimental & Theoretical Physics;Jun2008, Vol. 106 Issue 6, p1007 

    Irradiation of a thin metal target by 38-fs laser pulses at a wavelength of 800 nm is shown to generate a beam of photoelectrons that contains a component whose duration is shorter than 100 fs. The ensemble of photoelectrons is formed by photoemission of a gold film about 10 nm thick sputtered...

  • Formation of nanoparticles on the silicon surface under the effect of femtosecond laser pulses. Zabotnov, S. V.; Ezhov, A. A.; Golovan', L. A.; Lastovkina, M. A.; Panov, V. I.; Timoshenko, V. Yu.; Kashkarov, P. K. // Semiconductors;Aug2007, Vol. 41 Issue 8, p998 

    Nanoparticles were formed on the surface of single-crystal silicon as a result of irradiation of this surface with femtosecond laser pulses. According to the data of the atomic-force microscopy, the height of these nanoparticles ranges from 2 to 30 nm and their transverse size varies from 70 to...

  • Enhancement of laser ablation yield by two color excitation. Zoppel, S.; Merz, R.; Zehetner, J.; Reider, G. A. // Applied Physics A: Materials Science & Processing;Sep2005, Vol. 81 Issue 4, p847 

    We present ablation results of silicon obtained by simultaneous irradiation of the sample with the fundamental beam of a picosecond-neodymium-vanadate (Nd:VAN) laser (1064 nm, 10 ps pulse duration) and a small amount of second harmonic (SH) produced in a thin nonlinear crystal. In this fashion,...

  • Femtosecond laser induced crystallization and permanent relief grating structures in amorphous inorganic (In[sub 2]O[sub 3]+1 wt % TiO[sub 2]) films. Katayama, Shigeru; Tsutsumi, Naoto; Nakamura, Toshitaka; Horiike, Mika; Hirao, Kazuyuki // Applied Physics Letters;7/29/2002, Vol. 81 Issue 5, p832 

    This letter presents an investigation of crystalline relief grating structures induced by irradiation of near-infrared femtosecond laser pulses on an amorphous inorganic (In[sub 2]O[sub 3] + 1 wt % TiO[sub 2]) film. The shapes of crystallized relief structures were sensitive to the scanning rate...

  • Nonlinear-transmission spectra of porous silicon: Manifestation of size quantization. Klimov, V.I.; Dneprovskii, V.S. // Applied Physics Letters;5/16/1994, Vol. 64 Issue 20, p2691 

    Examines changes in the transmission of porous silicon layers induced by ultrashort laser pulses using picosecond pump and probe measurements. Relaxation time of the excitation-induced transmission changes; Observation of bleaching bands by time-resolved differential transmission spectra;...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics