TITLE

Response to “Comment on ‘Coulomb explosion in femtosecond laser ablation of Si(111)’” [ Appl. Phys. Lett. 85, 694 (2004) ]

AUTHOR(S)
Roeterdink, W. G.; Bonn, M.; Kleyn, A. W.
PUB. DATE
July 2004
SOURCE
Applied Physics Letters;7/26/2004, Vol. 85 Issue 4, p696
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Presents a response to a comment regarding silicon (Si) ablation experiments. Absence of coloumb explosion on silicon; Role of electron transport; Electron microscopy of the ablated Si surface.
ACCESSION #
13885826

 

Related Articles

  • Ballistic-electron-emission microscopy characteristics of reverse-biased Schottky diodes. Davies, A.; Craighead, H.G. // Applied Physics Letters;5/23/1994, Vol. 64 Issue 21, p2833 

    Examines the use of ballistic-electron-emission microscopy to study gold/silicon Schottky diodes under reverse-bias conditions. Effects of reverse bias on the barrier height and collection efficiency of electron transport; Reduction of backscattered electrons; Determination of the interface...

  • Moment expansion approach to calculate impact ionization rate in submicron silicon devices. Sonoda, Ken-ichiro; Yamaji, Mitsuru; Taniguchi, Kenji; Hamaguchi, Chihiro; Dunham, Scott T. // Journal of Applied Physics;11/1/1996, Vol. 80 Issue 9, p5444 

    Deals with a study which proposed a method to calculate the impact of ionization rate in submicron silicon devices using both an average energy and an average square energy of electrons. Ways that can be used to derive the energy transport model from the Boltzmann transport equation; Results...

  • Optical and Electrical Properties of Thin Wafers Fabricated from Nanocrystalline Silicon Powder. Kononov, N. N.; Kuz'min, G. P.; Orlov, A. N.; Surkov, A. A.; Tikhonevich, O. V. // Semiconductors;Jul2005, Vol. 39 Issue 7, p835 

    The infrared transmittance spectra and dark conductivity of wafers fabricated from nanocrystalline silicon powder (nc-Si) have been studied. The initial nc-Si powder is first synthesized by laser-induced silane dissociation, with the temperature of the surrounding buffer gas varied from 20 to...

  • Ballistic electron emission microscopy on biased GaAs–AlGaAs superlattices. Heer, R.; Smoliner, J.; Strasser, G.; Gornik, E. // Applied Physics Letters;11/23/1998, Vol. 73 Issue 21 

    In this work, ballistic electron transport through the lowest miniband of a biased GaAs–AlGaAs superlattice is investigated by ballistic electron emission microscopy (BEEM). In the BEEM spectra the miniband manifests itself as clear peak in the second derivative of the ballistic electron...

  • Antiphase boundaries in epitaxially grown β-SiC. Pirouz, P.; Chorey, C. M.; Powell, J. A. // Applied Physics Letters;1/26/1987, Vol. 50 Issue 4, p221 

    When the surface of β-SiC, grown epitaxially on (001) silicon by chemical vapor deposition, is chemically etched, boundaries appear which may be observed by optical or scanning electron microscopy. Examination by plan-view and cross-sectional transmission electron microscopy shows boundaries...

  • Nonconservative Ostwald ripening of dislocation loops in silicon. Huang, Y. L.; Seibt, M.; Plikat, B. // Applied Physics Letters;11/16/1998, Vol. 73 Issue 20 

    We have investigated the effects of the proximity of the surface on the ripening behavior of dislocation loops in preamorphized silicon. Starting from well-defined initial conditions, we have varied the location depth of the loops by successive chemical removal of surface layers and measured...

  • In situ observation by ultrahigh vacuum reflection electron microscopy of terrace formation processes on (100) silicon surfaces during annealing. Inoue, N.; Yagi, K. // Applied Physics Letters;10/2/1989, Vol. 55 Issue 14, p1400 

    Formation processes of terraces on (100) silicon surfaces during annealing at 1000 °C were observed in situ by ultrahigh vacuum reflection electron microscopy. Terraces were formed on staircases made up of monoatomic steps, preferentially at the sites where stairs were larger than average....

  • A formation mechanism of carbon nanotube films on SiC(0001). Kusunoki, M.; Suzuki, T.; Hirayama, T.; Shibata, N.; Kaneko, K. // Applied Physics Letters;7/24/2000, Vol. 77 Issue 4 

    We report a remarkable difference of decomposed structures on the Si(0001) and C(0001¯) faces of a SiC single crystal observed by using a cross-sectional high-resolution electron microscopy. An aligned carbon nanotube (CNT) film was fabricated on the C face perpendicular to the surface after...

  • Growth of GeSi/Si strained-layer superlattices using limited reaction processing. Gronet, C. M.; King, C. A.; Opyd, W.; Gibbons, J. F.; Wilson, S. D.; Hull, R. // Journal of Applied Physics;3/15/1987, Vol. 61 Issue 6, p2407 

    Presents a study which examined the growth of silicon germanium (SiGe)/silicon superlattices using limited reaction processing. Fabrication of each multilayer structure; Examination of SiGe alloy layers using transmission electron microscopy; Use of a chemical vapor deposition technique to...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics